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Register a new userHigh frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers
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A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems.
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Hybrid systems consisting of a quantum emitter coupled to a mechanical oscillator are receiving increasing attention for fundamental science and potential applications in quantum technologies. In contrast to most of the presented works, in which the oscillator eigenfrequencies are irreversibly determined by the fabrication process, we present here a simple approach to obtain frequency-tunable mechanical resonators based on suspended nanomembranes. The method relies on a micromachined piezoelectric actuator, which we use both to drive resonant oscillations of a suspended Ga(Al)As membrane with embedded quantum dots and to fine tune their mechanical eigenfrequencies. Specifically, we excite oscillations with frequencies of at least 60 MHz by applying an AC voltage to the actuator and tune the eigenfrequencies by at least 25 times their linewidth by continuously varying the elastic stress state in the membranes through a DC voltage. The light emitted by optically excited quantum dots is used as sensitive local strain gauge to monitor the oscillation frequency and amplitude. We expect that our method has the potential to be applicable to other optomechanical systems based on dielectric and semiconductor membranes possibly operating in the quantum regime.
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures.
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and mechanical loss. Integrated AlN microring resonators in the shape of suspended rings exhibit high optical quality factor (Q) with loaded Q up to 125,000. Optomechanical transduction of the Brownian motion of a GHz contour mode yields a displacement sensitivity of 6.2times10^(-18)m/Hz^(1/2) in ambient air.
We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.
Nanomechanical resonators based on strained silicon nitride (Si$_3$N$_4$) have received a large amount of attention in fields such as sensing and quantum optomechanics due to their exceptionally high quality factors ($Q$s). Room-temperature $Q$s approaching 1 billion are now in reach by means of phononic crystals (soft-clamping) and strain engineering. Despite great progress in enhancing $Q$s, difficulties in fabrication of soft-clamped samples limits their implementation into actual devices. An alternative means of achieving ultra-high $Q$s was shown using trampoline resonators with engineered clamps, which serves to localize the stress to the center of the resonator, while minimizing stress at the clamping. The effectiveness of this approach has since come into question from recent studies employing string resonators with clamp-tapering. Here, we investigate this idea using nanomechanical string resonators with engineered clampings similar to those presented for trampolines. Importantly, the effect of orienting the strings diagonally or perpendicularly with respect to the silicon frame is investigated. It is found that increasing the clamp width for diagonal strings slightly increases the $Q$s of the fundamental out-of-plane mode at small radii, while perpendicular strings only deteriorate with increasing clamp width. Measured $Q$s agree well with finite element method simulations even for higher-order resonances. The small increase cannot account for previously reported $Q$s of trampoline resonators. Instead, we propose the effect to be intrinsic and related to surface and radiation losses.
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