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A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7,ps, other devices $sim$10-16,ps) simultaneously with high system detection efficiencies ($80-90%$) in the wavelength range of 780-1000,nm, as well as in the telecom bands (1310-1550,nm). The use of thicker films allowed us to fabricate large-area multi-pixel devices with homogeneous pixel performance. We first fabricated and characterized a $100times100, mu m^2$ 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon correlation experiments on a nanowire quantum dot resulting in $g^2(0)$ values lower than 0.04. The multi-pixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bio-imaging applications, such as fluorescence microscopy and positron emission tomography.
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We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows direct comparison of detector performance of waveguide-integrated detectors with various widths and lengths. The second type of demonstrated integrated-photonic structure allows us to achieve detection with a high dynamic range. This device allows a small number of detectors to count photons across many orders of magnitude in count rate. However, we find a stray light floor of -30 dB limits the dynamic range to three orders of magnitude. To assess the utility of the detectors for use in synapses in spiking neural systems, we measured the response with average incident photon numbers ranging from less than $10^{-3}$ to greater than $10$. The detector response is identical across this entire range, indicating that synaptic responses based on these detectors will be independent of the number of incident photons in a communication pulse. Such a binary response is ideal for communication in neural systems. We further demonstrate that the response has a linear dependence of output current pulse height on bias current with up to a factor of 1.7 tunability in pulse height. Throughout the work, we compare room-temperature measurements to cryogenic measurements. The agreement indicates room-temperature measurements can be used to determine important properties of the detectors.
We present a tabletop six-axis vibration isolation system, compatible with Ultra-High Vacuum (UHV), which is actively damped and provides 25 dB of isolation at 10 Hz and 65 dB at 100 Hz. While this isolation platform has been primarily designed to support optics in the Laser Interferometer Gravitational-Wave Observatory (LIGO) detectors, it is suitable for a variety of applications. The system has been engineered to facilitate the construction and assembly process, while minimizing cost. The platform provides passive isolation for six degrees of freedom using a combination of vertical springs and horizontal pendula. It is instrumented with voice-coil actuators and optical shadow sensors to damp the resonances. All materials are compatible with stringent vacuum requirements. Thanks to its architecture, the systems footprint can be adapted to meet spatial requirements, while maximizing the dimensions of the optical table. Three units are currently operating for LIGO. We present the design of the system, controls principle, and experimental results.
This paper explores the prospect of CMOS devices to assay lead in drinking water, using calorimetry. Lead occurs together with traces of radioisotopes, e.g. Lead-210, producing $gamma$-emissions with energies ranging from 10 keV to several 100 keV when they decay; this range is detectable in silicon sensors. In this paper we test a CMOS camera (Oxford Instruments Neo 5.5) for its general performance as a detector of x-rays and low energy $gamma$-rays and assess its sensitivity relative to the World Health Organization upper limit on lead in drinking water. Energies from 6 keV to 60 keV are examined. The CMOS camera has a linear energy response over this range and its energy resolution is for the most part slightly better than 2 %. The Neo sCMOS is not sensitive to x-rays with energies below $sim!!10 keV$. The smallest detectable rate is 40$pm$3 mHz, corresponding to an incident activity on the chip of 7$pm$4 Bq. The estimation of the incident activity sensitivity from the detected activity relies on geometric acceptance and the measured efficiency vs. energy. We report the efficiency measurement, which is 0.08$pm$0.02 % (0.0011$pm$0.0002 %) at 26.3 keV (59.5 keV). Taking calorimetric information into account we measure a minimal detectable rate of 4$pm$1 mHz (1.5$pm$0.1 mHz) for 26.3 keV (59.5 keV) $gamma$-rays, which corresponds to an incident activity of 1.0$pm$0.6 Bq (57$pm$33 Bq). Toy Monte Carlo and Geant4 simulations agree with these results. These results show this CMOS sensor is well-suited as a $gamma$- and x-ray detector with sensitivity at the few to 100 ppb level for Lead-210 in a sample.
Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly required for many applications. Here, we present a practical approach to increase PDE of silicon SPD with a monolithic integrated circuit of active quenching and active reset (AQAR). The AQAR integrated circuit is specifically designed for thick silicon single-photon avalanche diode (SPAD) with high breakdown voltage (250-450 V), and then fabricated via the process of high-voltage 0.35-$mu$m bipolarCMOS-DMOS. The AQAR integrated circuit implements the maximum transition voltage of ~ 68 V with 30 ns quenching time and 10 ns reset time, which can easily boost PDE to the upper limit by regulating the excess bias up to a high enough level. By using the AQAR integrated circuit, we design and characterize two SPDs with the SPADs disassembled from commercial products of single-photon counting modules (SPCMs). Compared with the original SPCMs, the PDE values are increased from 68.3% to 73.7% and 69.5% to 75.1% at 785 nm, respectively, with moderate increases of dark count rate and afterpulse probability. Our approach can effectively improve the performance of the practical applications requiring silicon SPDs.
Wavefront sensors are an important tool to characterize coherent beams of extreme ultraviolet radiation. However, conventional Hartmann-type sensors do not allow for independent wavefront characterization of different spectral components that may be present in a beam, which limits their applicability for intrinsically broadband high-harmonic generation (HHG) sources. Here we introduce a wavefront sensor that measures the wavefronts of all the harmonics in a HHG beam in a single camera exposure. By replacing the mask apertures with transmission gratings at different orientations, we simultaneously detect harmonic wavefronts and spectra, and obtain sensitivity to spatiotemporal structure such as pulse front tilt as well. We demonstrate the capabilities of the sensor through a parallel measurement of the wavefronts of 9 harmonics in a wavelength range between 25 and 49 nm, with up to lambda/32 precision.
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