Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMemory effect in the charge transport in strongly disordered antimony films
82
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages.
rate research
Read More
We investigate the role of disorder in the edge transport of axion insulator films. We predict by first-principles calculations that even-number-layer MnBi$_2$Te$_4$ have gapped helical edge states. The random potential will dramatically modify the edge spectral function to become gapless. However, such gapless helical state here is fundamentally different from that in quantum spin Hall insulator or topological Anderson insulator. We further study the edge transport in this system by Landauer-B{u}ttiker formalism, and find such gapless edge state is dissipative and not immune to backscattering, which would explain the dissipative nonlocal transport in the axion insulator state observed in six septuple layer MnBi$_2$Te$_4$ experimentally. Several transport experiments are proposed to verify our theory on the dissipative helical edge channels. In particular, the longitudinal resistance can be greatly reduced by adding an extra floating probe even if it is not used. These results will facilitate the observsation of long-sought topological magnetoelectric effect in axion insulators.
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise measurements in a quantum dot obtained in a silicon metal-oxide-semiconductor field-effect transistor. The quality of our device allows us to precisely associate the different transport regimes and their statistics with the internal state of the quantum dot. In particular, we report on large current fluctuations in the inelastic cotunneling regime, corresponding to different highly-correlated, non-Markovian charge transfer processes. We have also observed unusually large current fluctuations at low energy in the elastic cotunneling regime, the origin of which remains to be fully investigated.
A wide variation in the disorder strength, as inferred from an order of magnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesler alloy thin films of fixed (50 nm) thickness, has been achieved by growing these films on Si(111) substrates at substrate temperatures ranging from room temperature (RT) to 600 C. An in-depth study of the influence of disorder on anomalous Hall resistivity,longitudinal resistivity(LR) and magnetoresistance, enabled by this approach, reveals the following. The side-jump mechanism gives a dominant contribution to anomalous Hall resistivity (AHR) in the CFS thin films, regardless of the degree of disorder present. A new and novel contribution to both LR and AHR characterized by the logarithmic temperature dependence at temperatures below the minimum, exclusive to the amorphous CFS films, originates from the scattering of conduction electrons from the diffusive hydrodynamic modes associated with the longitudinal component of magnetization, called diffusons. In these amorphous CFS films, the electron-diffuson, e d, scattering and weak localization (WL) mechanisms compete with that arising from the inelastic electron magnon, e m, scattering to produce the minimum in longitudinal resistivity, whereas the minimum in AHR is caused by the competing contributions from the e d and e m scattering, as WL does not make any contribution to AHR. In sharp contrast, in crystalline films, enhanced electron electron Coulomb interaction (EEI), which is basically responsible for the resistivity minimum, makes no contribution to AHR with the result that AHR does not exhibit a minimum.
We develop an analytical theory for quantum phase transitions driven by disorder in magnets and superconductors. We study these transitions with a cavity approximation which becomes exact on a Bethe lattice with large branching number. We find two different disordered phases, characterized by very different relaxation rates, which both exhibit strong inhomogeneities typical of glassy physics.
We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb2Te3) nanowires with diameters in the range of 20-100 nm. Temperature dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffusive thermoelectric generation, with an enhancement of the TEP for smaller diameter wires up to 110 uV/K at T = 300 K. We measure the magnetoresistance, in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
