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Comment on Unveiling the double-well energy landscape in a ferroelectric layer

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 Added by Jorge Kittl
 Publication date 2020
  fields Physics
and research's language is English




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Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.



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We consider the energetics of a superconducting double dot, comprising two superconducting islands coupled in series via a Josephson junction. The periodicity of the stability diagram is governed by the competition between the charging energy and the superconducting gap, and the stability of each charge state depends upon its parity. We also find that, at finite temperatures, thermodynamic considerations have a significant effect on the stability diagram.
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.
119 - H.G. Zhang , , T. Greber 2010
In a recent letter [Phys. Rev. Lett. 105 (2010) 036804] the unoccupied electronic states of single layers of graphene on ruthenium are investigated. Here we comment on the interpretation, which deviates in four points from [J. Phys.: Condens. Matter 22 (2010) 302001] and outline the corresponding consequences.
Two-dimensional systems that host one-dimensional helical states are exciting from the perspective of scalable topological quantum computation when coupled with a superconductor. Graphene is particularly promising for its high electronic quality, versatility in van der Waals heterostructures and its electron and hole-like degenerate 0$th$ Landau level. Here, we study a compact double layer graphene SQUID (superconducting quantum interference device), where the superconducting loop is reduced to the superconducting contacts, connecting two parallel graphene Josephson junctions. Despite the small size of the SQUID, it is fully tunable by independent gate control of the Fermi energies in both layers. Furthermore, both Josephson junctions show a skewed current phase relationship, indicating the presence of superconducting modes with high transparency. In the quantum Hall regime we measure a well defined conductance plateau of 2$e^2/h$ an indicative of counter propagating edge channels in the two layers. Our work opens a way for engineering topological superconductivity by coupling helical edge states, from graphenes electron-hole degenerate 0$th$ Landau level via superconducting contacts.
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
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