Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCompact SQUID realized in a double layer graphene heterostructure
74
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Two-dimensional systems that host one-dimensional helical states are exciting from the perspective of scalable topological quantum computation when coupled with a superconductor. Graphene is particularly promising for its high electronic quality, versatility in van der Waals heterostructures and its electron and hole-like degenerate 0$th$ Landau level. Here, we study a compact double layer graphene SQUID (superconducting quantum interference device), where the superconducting loop is reduced to the superconducting contacts, connecting two parallel graphene Josephson junctions. Despite the small size of the SQUID, it is fully tunable by independent gate control of the Fermi energies in both layers. Furthermore, both Josephson junctions show a skewed current phase relationship, indicating the presence of superconducting modes with high transparency. In the quantum Hall regime we measure a well defined conductance plateau of 2$e^2/h$ an indicative of counter propagating edge channels in the two layers. Our work opens a way for engineering topological superconductivity by coupling helical edge states, from graphenes electron-hole degenerate 0$th$ Landau level via superconducting contacts.
rate research
Read More
Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride (hBN), we investigate density tunable magneto- and Hall-drag under strong magnetic fields. The observed large magneto-drag and Hall-drag signals can be related with Laudau level (LL) filling status of the drive and drag layers. We find that the sign and magnitude of the magneto- and Hall-drag resistivity tensor can be quantitatively correlated to the variation of magneto-resistivity tensors in the drive and drag layers, confirming a theoretical formula for magneto-drag in the quantum Hall regime. The observed weak temperature dependence and $sim B^2$ dependence of the magneto-drag are qualitatively explained by Coulomb scattering phase-space argument.
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
In the recent advancement in Graphene heterostructures, it is possible to create a double layer tunnel decoupled Graphene system which has strong interlayer electronic interaction. In this work, we restrict the parameters in the Hamiltonian using simple symmetry arguments. We study the ground state of this system in the Hartree-Fock approximation at $ u_1= u_2=0$. In addition to the phases found in monolayer Graphene, we found the existence of layer correlated phase which breaks the layer $U(1)$ symmetry. At non-zero Zeeman coupling strength ($E_z$) this layer correlated state has a small magnetization, which vanishes as $E_z$ goes to zero. We discuss the bulk gapless modes using the Goldstone theorem. We also comment on the edge structure for the layer correlated phase.
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additional layer is two-fold: it provides screening of the long-range potential of charged defects in the system, and screens out Coulomb interactions between charge carriers. We find that the efficiency of defect charge screening is strongly dependent on the concentration and location of defects within the DLG. In particular, only a moderate suppression of electron-hole puddles around the Dirac point induced by the high concentration of remote impurities in the silicon oxide substrate could be achieved. A stronger effect is found on the elastic relaxation rate due to charged defects resulting in mobility strongly dependent on the electron denisty in the additional layer of DLG. We find that the quantum interference correction to the resistivity of graphene is also strongly affected by screening in DLG. In particular, the dephasing rate is strongly suppressed by the additional screening that supresses the amplitude of electron-electron interaction and reduces the diffusion time that electrons spend in proximity of each other. The latter effect combined with screening of elastic relaxation rates results in a peculiar gate tunable weak-localization magnetoresistance and quantum correction to resistivity. We propose suitable experiments to test our theory and discuss the possible relevance of our results to exisiting data.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
