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Register a new userInvestigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors
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Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^circ$ to $5.07^{-0.83}_{+2.58}A^circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.
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Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.
We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future $^{76}$Ge neutrinoless double beta ($0 ubetabeta$) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge detectors (BEGe) that are currently used in the GERDA $0 ubetabeta$ decay experiment. This will result in lower background for the search of $0 ubetabeta$ decay due to a reduction of cables, electronics and holders. The measured resolution near the $^{76}$Ge Q-value at 2039 keV is 2.5 keV and their pulse-shape characteristics are similar to BEGe-detectors. It is concluded that this type of Ge-detector is suitable for usage in $^{76}$Ge $0 ubetabeta$ decay experiments.
The GERmanium Detector Array (GERDA) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0{ u}{beta}{beta}) of $^{76}$Ge. Germanium detectors made of material with an enriched $^{76}$Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of the experiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new $^{76}$Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in GERDA during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the $^{76}$Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of GERDA Phase~II.
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$times$10$^{11}/$cm$^{3}$ for collecting holes.
High purity germanium (HPGe) crystals will be used for the MAJORANA DEMONSTRATOR, where they serve as both the source and the detector for neutrinoless double beta decay. It is crucial for the experiment to understand the performance of the HPGe crystals. A variety of crystal properties are being investigated, including basic properties such as energy resolution, efficiency, uniformity, capacitance, leakage current and crystal axis orientation, as well as more sophisticated properties, e.g. pulse shapes and dead layer and transition layer distributions. In this paper, we will present our measurements that characterize the HPGe crystals. We will also discuss our simulation package for the detector characterization setup, and show that additional information can be extracted from data-simulation comparisons.
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