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Silicon sensors with high time resolution can help particle identification in the International Linear Collider (ILC). We are studying Low Gain Avalanche Diodes (LGADs) as a high timing resolution sensor. As a step to develop LGADs, we are now focusing to characterize Avalanche Photo Diode (APD)s, because the APDs has the same multiplication structure as LGADs. We studied the characteristics of APDs with particles from radioisotopes.
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Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.
We describe a setup for optical quality assurance of silicon microstrip sensors. Pattern recognition algorithms were developed to analyze microscopic scans of the sensors for defects. It is shown that the software has a recognition and classification rate of $>$~90% for defects like scratches, shorts, broken metal lines etc. We have demonstrated that advanced image processing based on neural network techniques is able to further improve the recognition and defect classification rate.
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 times 10^{15} 1 mathrm{,Mekern -0.1em V} mathrm{ ,n_{eq}} {mathrm{ ,cm}}^{-2}$. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.
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