We experimentally demonstrate tight focusing of a spin wave beam excited in extended nanometer-thick films of Yttrium Iron Garnet by a simple microscopic antenna functioning as a single-slit near-field lens. We show that the focal distance and the minimum transverse width of the focal spot can be controlled in a broad range by varying the frequency/wavelength of spin waves and the antenna geometry. The experimental data are in good agreement with the results of numerical simulations. Our findings provide a simple solution for implementation of magnonic nano-devices requiring local concentration of the spin-wave energy.
We demonstrate a microscopic magnonic-crystal waveguide produced by nano-patterning of a 20 nm thick film of Yttrium Iron Garnet. By using the phase-resolved micro-focus Brillouin light scattering spectroscopy, we map the intensity and the phase of spin waves propagating in such a periodic magnetic structure. Based on these maps, we obtain the dispersion and the attenuation characteristics of spin waves providing detailed information about the physics of spin-wave propagation in the magnonic crystal. We show that, in contrast to the simplified physical picture, the maximum attenuation of spin waves is achieved close to the edge of the magnonic band gap, which is associated with non-trivial reflection characteristics of spin waves in non-uniform field potentials.
We investigate yttrium iron garnet (YIG)/cobalt (Co) heterostructures using broadband ferromagnetic resonance (FMR). We observe an efficient excitation of perpendicular standing spin waves (PSSWs) in the YIG layer when the resonance frequencies of the YIG PSSWs and the Co FMR line coincide. Avoided crossings of YIG PSSWs and the Co FMR line are found and modeled using mutual spin pumping and exchange torques. The excitation of PSSWs is suppressed by a thin aluminum oxide (AlOx) interlayer but persists with a copper (Cu) interlayer, in agreement with the proposed model.
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction of the charge conductivity by resonant impurity scattering. These findings can be exploited to create materials with high efficiency of charge to spin current conversion by strain engineering.
Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization is large for momenta far from the center of the surface Brillouin zone. In addition, the polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. Our theoretical model calculations capture this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage.