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Register a new userOperando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel
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An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different routes can be followed, depending on the height of the steps to be crossed. When a growing graphene flake reaches a monoatomic step, it extends jointly with the underlying Ni layer; for higher Ni edges, a different process, involving step retraction and graphene landing, becomes active. At step bunches, the latter mechanism leads to a peculiar staircase formation behavior, where terraces of equal width form under the overgrowing graphene, driven by a balance in the energy cost between C-Ni bond formation and stress accumulation in the carbon layer. Our results represent a step towards bridging the material gap in searching new strategies and methods for the optimization of chemical vapor deposition graphene production on polycrystalline metal surfaces.
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Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.
Growing large-area single-crystal monolayers is the holy grail of graphene synthesis. In this work, the efficiency of graphene growth and the quality of their continuous films are explored through the time evolution of individual domains and their surface coverage on the substrate. Our phase-field modeling results and experimental characterization clearly demonstrate the critical roles of the deposition flux, edge-reaction kinetics and the surface diffusion of active carbon sources in modulating the pattern evolution and rate of growth. The contrast in edge-kinetics-limited and surface-diffusion-limited regimes is remarkable, which can be characterized by the evolution of domain patterns and considered as an indicator of the growth regime. Common features exist in these two regimes, showing that the growth rate scales with time as t2 in the early stage of growth and is regime-independent, which is explained by the coarsen profiles of carbon concentration for both the compact and dendritic domains. The rate decays rapidly in the final stage of growth due to the competition between neighboring domains on the limited carbon sources diffusing on the substrate, which is highly regime-sensitive and extremely low in the surface-diffusion-limited regime with narrow gaps between the domains to be filled. Based on these findings, synthesis strategies to improve the growth efficiency and film quality are discussed.
Imaging individual vacancies in solids and revealing their interactions with solute atoms remains one of the frontiers in microscopy and microanalysis. Here we study a creep-deformed binary Ni-2 at.% Ta alloy. Atom probe tomography reveals a random distribution of Ta. Field ion microscopy, with contrast interpretation supported by density-functional theory and time-of-flight mass spectrometry, evidences a positive correlation of tantalum with vacancies. Our results support solute-vacancy binding, which explains improvement in creep resistance of Ta-containing Ni-based superalloys and helps guide future material design strategies.
In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior to growth; iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 micrometers per minute are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about one millimetre can be obtained in just one hour. The samples are characterised by optical microscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy as well as selected area electron diffraction (SAED) and low-energy electron diffraction (LEED), which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.
Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using microRaman spectroscopy, x-ray photoemission spectroscopy, scanning electron and atomic force microscopies. We find that by simply varying the carbon precursor flow different growth regimes - yielding to graphene nanoribbons, graphene monolayer and graphene multilayer - are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.
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