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Register a new userQuantum Hall conductivity in the presence of interactions
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We discuss quantum Hall effect in the presence of arbitrary pair interactions between electrons. It is shown that irrespective of the interaction strength the Hall conductivity is given by the filling fraction of Landau levels averaged over the ground state of the system. This conclusion remains valid for both integer and fractional quantum Hall effect.
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We report quantitative measurements of the impact of alloy disorder on the $ u=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that the $ u=5/2$ state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the $ u=5/2$ state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.
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In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the constrictions, a region between them, with higher electron density, may form a compressible island. Electron-tunneling through this island can lead to residual transport, modulated by Coulomb-blockade type effects. We find that the coupling between the fully occupied lower Landau levels and the higher-partially occupied level gives rise to flux subperiods smaller than one flux quantum. We generalize this scenario to other geometries and to fractional quantum Hall systems, and compare our predictions to experiments.
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