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Register a new userProximity induced spin-orbit splitting in graphene nanoribbons on transition metal dichalcogenides
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We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. We consider both semiconducting TMDs and metallic TMDs, and different stacking configurations. We find that when the TMD is semiconducting the effects on the band structure of the GNRs are small. In particular the spin-splitting induced by proximity on the GNRs bands is only of the order of few meV irrespective of the stacking configuration. When the TMD is metallic, such as NbSe2, we find that the spin-splitting induced in the GNRs can be very large and strongly dependent on the stacking configuration. For optimal stacking configurations the proximity-induced spin-splitting is of the order of 20 meV for armchair graphene nanoribbons, and as high as 40 meV for zigzag graphene nanoribbons. This results are encouraging for the prospects of using GNR-TMD heterostructures to realize quasi one-dimensional topological superconducting states supporting Majorana modes.
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We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley Hall effect, which we call spin-orbit coupling induced valley Hall effect. Importantly, near the conduction band edge, the valley-dependent Berry curvatures generated by spin-orbit couplings are highly tunable by external gates and dominate over the intrinsic Berry curvatures originating from orbital degrees of freedom under accessible experimental conditions. We show that the spin-orbit coupling induced valley Hall effect is manifested in the gate dependence of the valley Hall conductivity, which can be detected by Kerr effect experiments.
In this paper we develop the excitonic theory of Kerr rotation angle in a two-dimensional (2D) transition metal dichalcogenide at zero magnetic field. The finite Kerr angle is induced by the interplay between spin-orbit splitting and proximity exchange coupling due to the presence of a ferromagnet. We compare the excitonic effect with the single particle theory approach. We show that the excitonic properties of the 2D material lead to a dramatic change in the frequency dependence of the optical response function. We also find that the excitonic corrections enhance the optical response by a factor of two in the case of MoS2 in proximity to a Cobalt thin film.
Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1{AA}, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers.
We investigate the interactions between two identical magnetic impurities substituted into a graphene superlattice. Using a first-principles approach, we calculate the electronic and magnetic properties for transition-metal substituted graphene systems with varying spatial separation. These calculations are compared for three different magnetic impurities, manganese, chromium, and vanadium. We determine the electronic band structure, density of states, and Millikan populations (magnetic moment) for each atom, as well as calculate the exchange parameter between the two magnetic atoms as a function of spatial separation. We find that the presence of magnetic impurities establishes a distinct magnetic moment in the graphene lattice, where the interactions are highly dependent on the spatial and magnetic characteristic between the magnetic atoms and the carbon atoms, which leads to either ferromagnetic or antiferromagnetic behavior. Furthermore, through an analysis of the calculated exchange energies and partial density of states, it is determined that interactions between the magnetic atoms can be classified as an RKKY interaction.
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