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Register a new userHighly tunable nonlinear Hall effects induced by spin-orbit couplings in strained polar transition-metal dichalcogenides
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Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1{AA}, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers.
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In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley Hall effect, which we call spin-orbit coupling induced valley Hall effect. Importantly, near the conduction band edge, the valley-dependent Berry curvatures generated by spin-orbit couplings are highly tunable by external gates and dominate over the intrinsic Berry curvatures originating from orbital degrees of freedom under accessible experimental conditions. We show that the spin-orbit coupling induced valley Hall effect is manifested in the gate dependence of the valley Hall conductivity, which can be detected by Kerr effect experiments.
Orbital Hall effect (OHE) is the phenomenon of transverse flow of orbital moment in presence of an applied electric field. Solids with broken inversion symmetry are expected to exhibit a strong OHE due to the presence of an intrinsic orbital moment at individual momentum points in the Brillouin zone, which in presence of an applied electric field, flows in different directions causing a net orbital Hall current. Here we provide a comprehensive understanding of the effect and its tunability in the monolayer 2D transition metal dichalcogenides (TMDCs). Both metallic and insulating TMDCs are investigated from full density-functional calculations, effective $d$-band tight-binding models, as well as a minimal four-band model for the valley points that captures the key physics of the system. For the tuning of the OHE, we examine the role of hole doping as well as the change in the band parameters, which, e. g., can be controlled by strain. We demonstrate that the OHE is a more fundamental effect than the spin Hall effect (SHE), with the momentum-space orbital moments inducing a spin moment in the presence of the spin-orbit coupling, leading to the SHE. The physics of the OHE, described here, is relevant for 2D materials with broken inversion symmetry in general, even beyond the TMDCs, providing a broad platform for future research.
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
A circularly polarized a.c. pump field illuminated near resonance on two-dimensional transition metal dichalcogenides (TMDs) produces an anomalous Hall effect in response to a d.c. bias field. In this work, we develop a theory for this photo-induced anomalous Hall effect in undoped TMDs irradiated by a strong coherent laser field. The strong field renormalizes the equilibrium bands and opens up a dynamical energy gap where single-photon resonance occurs. The resulting photon dressed states, or Floquet states, are treated within the rotating wave approximation. A quantum kinetic equation approach is developed to study the non-equilibrium density matrix and time-averaged transport currents under the simultaneous influence of the strong a.c. pump field and the weak d.c. probe field. Dissipative effects are taken into account in the kinetic equation that captures relaxation and dephasing. The photo-induced longitudinal and Hall conductivities display notable resonant signatures when the pump field frequency reaches the spin-split interband transition energies. Rather than valley polarization, we find that the anomalous Hall current is mainly driven by the intraband response of photon-dressed electron populations near the dynamical gap at both valleys, accompanied by a smaller contribution due to interband coherences. These findings highlight the importance of photon-dressed bands and non-equilibrium distribution functions in achieving a proper understanding of photo-induced anomalous Hall effect in a strong pump field.
Cooperative effects allow for fascinating characteristics in light-matter interacting systems. Here, we study naturally occurring superradiant coupling in a class of quasi-two-dimensional, layered semiconductor systems. We perform optical absorption experiments of the lowest exciton for transition-metal dichalcogenides with different numbers of atomic layers. We examine two representative materials, MoSe$_2$ and WSe$_2$, using incoherent broadband white light. The measured transmission at the A exciton resonance does not saturate for optically thick samples consisting of hundreds of atomic layers, and the transmission varies nonmonotonously with the layer number. A self-consistent microscopic calculation reproduces the experimental observations, clearly identifying superradiant coupling effects as the origin of this unexpected behavior.
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