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Register a new userTransient response of spin Peltier effect revealed by lock-in thermoreflectance measurement
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Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE through the spin Hall effect, and measured the AC response of the resultant SPE-induced temperature modulation at frequencies ranging from 10 Hz to 1 MHz. We found that the SPE-induced temperature modulation decreases with increasing the frequency when the frequency is >1 kHz. This is a characteristic feature of SPE revealed by the high frequency measurements based on the lock-in thermoreflectance, while previous low frequency measurements showed that the SPE signal is independent of the frequency. We attribute the decrease of the temperature modulation to the length scale of the SPE-induced heat current; by comparing the experimental results with one-dimensional heat conduction calculations, the length scale of SPE is estimated to be 0.94 {mu}m.
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We report the observation of anomalous peak structures induced by hybridized magnon-phonon excitation (magnon polarons) in the magnetic field dependence of the spin Peltier effect (SPE) in a Lu$_{2}$Bi$_{1}$Fe$_{4}$Ga$_{1}$O$_{12}$ (BiGa:LuIG) with Pt contact. The SPE peaks coincide with magnetic fields tuned to the threshold of magnon-polaron formation, consistent with the previous observation in the spin Seebeck effect. The enhancement of SPE is attributed to the lifetime increase in spin current caused by magnon-phonon hybridization in BiGa:LuIG.
Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency TDTR mapping technique to visualize the thermal conduction across buried semiconductor interfaces for beta-Ga2O3-SiC samples. Both the beta-Ga2O3 thermal conductivity and the buried beta-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 um x 200 um. Areas with low TBC values ( smaller than 20 MW/m2-K) are successfully identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing. The steady-state temperature rise (detector voltage), usually ignored in TDTR measurements, is found to be able to probe TBC variations of the buried interfaces without the limit of thermal penetration depth. This technique can be applied to detect defects/voids in deeply buried heterogeneous interfaces non-destructively, and also opens a door for the visualization of thermal conductance in nanoscale nonhomogeneous structures.
We studied the light-induced effects in BiFeO$_3$ single crystals as a function of temperature by means of optical spectroscopy. Here we report the observation of several light-induced absorption features, which are discussed in terms of the photostriction effect and are interpreted in terms of excitons. The temperature dependence of their energy position suggests a possible coupling between the excitons and the lattice vibrations. Moreover, there are hints for anomalies in the temperature evolution of the excitonic features, which might be related to the temperature-induced magnetic phase transitions in BiFeO$_3$. Our findings suggest a coupling between light-induced excitons and the lattice and spin degrees of freedom, which might be relevant for the observed ultrafast photostriction effect in multiferroic BiFeO$_3$.
We report the observation of magnetic-field-induced suppression of the spin Peltier effect (SPE) in a junction of a paramagnetic metal Pt and a ferrimagnetic insulator ${rm Y_{3}Fe_{5}O_{12}}$ (YIG) at room temperature. For driving the SPE, spin currents are generated via the spin Hall effect from applied charge currents in the Pt layer, and injected into the adjacent thick YIG film. The resultant temperature modulation is detected by a commonly-used thermocouple attached to the Pt/YIG junction. The output of the thermocouple shows sign reversal when the magnetization is reversed and linearly increases with the applied current, demonstrating the detection of the SPE signal. We found that the SPE signal decreases with the magnetic field. The observed suppression rate was found to be comparable to that of the spin Seebeck effect (SSE), suggesting the dominant and similar contribution of the low-energy magnons in the SPE as in the SSE.
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.
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