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The resonant coupling of phonons and magnons is important for the interconversion of phononic and spin degrees of freedom. We studied the phonon transmission in LiNbO3 manipulated by the dynamic magnetization in a Ni thin film. It was observed that the phonons could be absorbed strongly through resonant magnon-phonon coupling, which was realized by optimizing the interfacial coupling between Ni and LiNbO3. The line shapes of phonon transmission were further investigated considering the magnon-phonon interconversion in the elastically driven ferromagnetic resonance process. The results promote unique routes for phonon manipulation and detection in the presence of magnetization dynamics.
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The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR) (~80% at 14 T). This PMR is two orders of magnitude larger than the MR observed in NM/FM bilayers reported to date, and its magnitude can be controlled by a gate voltage. These results are explained by the penetration of the InAs two-dimensional-electron wavefunction into (Ga,Fe)Sb. The ability to strongly modulate the NM channel current by both electrical and magnetic gating represents a new concept of magnetic-gating spin transistors.
Vertical packaging of multiple Giant Magnetoresistance (multi-GMR) stacks is a very interesting noise reduction strategy for local magnetic sensor measurements, which has not been reported experimentally so far. Here, we have fabricated multi-GMR sensors (up to 12 repetitions) keeping good GMR ratio, linearity and low roughness. From magnetotransport measurements, two different resistance responses have been observed with a crossover around 5 GMR repetitions: step-like (N<5) and linear (N>5) behavior, respectively. With the help of micromagnetic simulations, we have analyzed in detail the two main magnetic mechanisms: the Neel coupling distribution induced by the roughness propagation and the additive dipolar coupling between the N free layers. Furthermore we have correlated the dipolar coupling mechanism, controlled by the number of GMRs (N) and lateral dimensions (width), to the sensor performance (sensitivity, noise and detectivity) in good agreement with analytical theory. The noise roughly decreases in multi-GMRs as 1/sqrt{N} in both regimes (low frequency 1/f and thermal noise). The sensitivity is even stronger reduced, scaling as 1/N, in the strong dipolar regime (narrow devices) while converges to a constant value in the weak dipolar regime (wide devices). Very interestingly, they are more robust against undesirable RTN noise than single GMRs at high voltages and the linearity can be extended towards much larger magnetic field range without dealing with the size and the reduction of GMR ratio. Finally, we have identified the optimal conditions for which multi-GMRs exhibit lower magnetic field detectivity than single GMRs: wide devices operating in the thermal regime where much higher voltage can be applied without generating remarkable magnetic noise.
We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on ferromagnetic resonance (FMR) excitation of recording-layer magnetizations by the microwave field from the STO. The FMR excitation affects the oscillation of the STO, which is utilized to sense the magnetization states in a recording layer. The recording layers are designed to have different FMR frequencies so that the FMR excitation is selectively induced by tuning the oscillation frequency of the STO. Since all magnetic layers interact with each other through dipolar fields, unnecessary interlayer interferences can occur, which are suppressed by designing magnetic properties of the layers. We move the STO over the magnetic dots, which models a read head moving over recording media, and show that changes in the STO oscillation occur on the one-nanosecond timescale.
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($alpha = 3.98 pm 0.22 times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 pm 0.5 times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.
Observation of the Fano line shapes is essential to understand properties of the Fano resonance in different physical systems. We explore a tunable Fano resonance by tuning the phase shift in a Mach-Zehnder interferometer (MZI) based on a single-mode nano-optomechanical cavity. The Fano resonance is resulted from the optomechanically induced transparency caused by a nano-mechanical resonator and can be tuned by applying an optomechanical MZI. By tuning the phase shift in one arm of the MZI, we can observe the periodically varying line shapes of the Fano resonance, which represents an elaborate manipulation of the Fano resonance in the nanoscale optomechanics.
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