Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userQuantum confinement of the Dirac surface states in topological-insulator nanowires
432
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.
rate research
Read More
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on electronic inversion symmetry breaking which typically stems from intrinsic spin-orbit coupling - a relativistic effect - in a non-centrosymmetric environment. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe the largest ever reported size of MCA rectification effect in a normal conductor - over 10000 times greater than in a typical material with a large MCA - and its behaviour is consistent with theory. Our findings present new opportunities for future technological applications of topological devices.
Confining two dimensional Dirac fermions on the surface of topological insulators has remained an outstanding conceptual challenge. Here we show that Dirac fermion confinement is achievable in topological crystalline insulators (TCI), which host multiple surface Dirac cones depending on the surface termination and the symmetries it preserves. This confinement is most dramatically reflected in the flux dependence of these Dirac states in the nanowire geometry, where different facets connect to form a closed surface. Using SnTe as a case study, we show how wires with all four facets of the <100> type display pronounced and unique Aharonov-Bohm oscillations, while nanowires with the four facets of the <110> type such oscillations are absent due to a strong confinement of the Dirac states to each facet separately. Our results place TCI nanowires as versatile platform for confining and manipulating Dirac surface states.
As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: 1) crystals with different vanadium (V) doping levels are insulating in the 3-300 K region, 2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and 3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.
When a topological insulator (TI) is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional (1D) states whose energy dispersion can be manipulated by external fields. With proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes (MZMs) that can be robust even in the presence of disorder. While the realization of the peculiar 1D states was recently confirmed, realization of robust proximity-induced superconductivity in TI nanowires remains a challenge. Here we report novel realization of superconducting TI nanowires based on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST) thin films: When two rectangular pads of Pd are deposited on a BST thin film with a separation of 100 - 200 nm, the BST beneath the pads is converted into a superconductor, leaving a nanowire of BST in-between. We found that the interface is epitaxial and has a high electronic transparency, leading to a robust superconductivity induced in the BST nanowire. Due to its suitable geometry for gate-tuning, this new platform is promising for future studies of MZMs.
In the recently discovered topological crystalline insulators (TCIs), topology and crystal symmetry intertwine to create surface states with a unique set of characteristics. Among the theoretical predictions for TCIs is the possibility of imparting mass to the massless Dirac fermions by breaking crystal symmetry, as well as a Lifshitz transition with a change of Fermi surface topology. Here we report high resolution scanning tunneling microscopy studies of a TCI, Pb1-xSnxSe. We demonstrate the formation of zero mass Dirac fermions protected by crystal symmetry and the mechanism of mass generation via symmetry breaking, which constitute the defining characteristics of TCIs. In addition, we show two distinct regimes of fermiology separated by a Van-Hove singularity at the Lifshitz transition point. Our work paves the way for engineering the Dirac band gap and realizing interaction-driven topological quantum phenomena in TCIs.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
