The state of a sample during crystal growth from high temperature solutions is not accessible in conventional furnace systems. An optimization of the growth parameters often requires arduous trial and error procedures in particular in case of novel multicomponent systems with unknown phase diagrams. Here we present a measurement technique based on lock-in amplification that allows for in-situ detection of the liquidus and solidus temperatures as well as structural phase transitions. A thin, metallic measurement wire is mounted in close vicinity to the melt. Characteristic anomalies in the time-dependent electrical resistivity of this wire allow for the detection of latent heat release without using a reference crucible. The method is implemented in a feedback furnace and enables an adjustment of the temperature profile based on the occurrence or absence of phase transitions. The absolute temperature serves as an additional source of information. Obtained phase transition temperatures are in good agreement with differential thermal analysis (DTA).
We present a study of the thickness dependence of magnetism and electrical conductivity in ultra thin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature (TC) increased, indicating a magnetic insulating phase at room temperature. These samples have a TC of about 560 K with a significant saturation magnetization of 1.2 +- 0.2 muB/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n< 10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.
Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattice interactions. Intercalation of VO2 with atomic hydrogen has been demonstrated, with evidence that this doping suppresses the transition. However, the detailed effects of intercalated H on the crystal and electronic structure of the resulting hydride have not been previously reported. Here we present synchrotron and neutron diffraction studies of this material system, mapping out the structural phase diagram as a function of temperature and hydrogen content. In addition to the original T and M1 phases, we find two orthorhombic phases, O1 and O2, which are stabilized at higher hydrogen content. We present density functional calculations that confirm the metallicity of these states and discuss the physical basis by which hydrogen stabilizes conducting phases, in the context of the metal-insulator transition.
Chemical modification, such as intercalation or doping of novel materials is of great importance for exploratory material science and applications in various fields of physics and chemistry. In the present work, we report the systematic intercalation of chemically exfoliated few-layer graphene with potassium while monitoring the sample resistance using microwave conductivity. We find that the conductivity of the samples increases by about an order of magnitude upon potassium exposure. The increased of number of charge carriers deduced from the ESR intensity also reflects this increment. The doped phases exhibit two asymmetric Dysonian lines in ESR, a usual sign of the presence of mobile charge carriers. The width of the broader component increases with the doping steps, however, the narrow components seem to have a constant line width.
Detailed analyses of the temperature-dependent zero field ac susceptibility of prototypical phase-separated (La1-yPry)0.7Ca0.3Mn16/18O3, 0 < y < 1, reveal features consistent with the presence of a Griffiths phase (GP), viz., an inverse susceptibility characterized by power law with 0.05 < lamda < 0.33 as y decreases towards yc < 0.85. Beyond yc = 0.85, the GP is suppressed. These data, combined with previous neutron diffraction measurements, enable a phase diagram summarizing the evolution of the GP with composition to be constructed for this system; in particular, it shows that the disorder relevant for the establishment of such a phase is linked closely to the relative volume fractions of the phase separated antiferromagnetic and ferromagnetic components, even when the recently estimated double exchange (DE) linked percolation threshold is exceeded. The influence of electron-phonon coupling can also be seen through oxygen isotope effects.
The rich phase diagram of bulk Pr$_{1-x}$Ca$_{x}$MnO$_3$ resulting in a high tunability of physical properties gave rise to various studies related to fundamental research as well as prospective applications of the material. Importantly, as a consequence of strong correlation effects, electronic and lattice degrees of freedom are vigorously coupled. Hence, it is debatable whether such bulk phase diagrams can be transferred to inherently strained epitaxial thin films. In this paper, the structural orthorhombic to pseudo-cubic transition for $x=0.1$ is studied in ion-beam sputtered thin films and point out differences to the respective bulk system by employing in-situ heating nano-beam electron diffraction to follow the temperature dependence of lattice constants. In addition, it is demonstrated that controlling the environment during heating, i.e. preventing oxygen loss, is crucial in order to avoid irreversible structural changes, which is expected to be a general problem of compounds containing volatile elements under non-equilibrium conditions.