No Arabic abstract
Magnetic nanostructures are often considered as highly functional materials because they exhibit unusual magnetic properties under different external conditions. We study the effect of surface pinning on the core-shell magnetic nanostuctures of different shapes and sizes considering the spin-interaction to be Ising-like. We explore the hysteresis properties and find that the exchange bias, even under zero field cooled conditions, increases with increase of, the pinning density and the fraction of up-spins among the pinned ones. We explain these behavior analytically by introducing a simple model of the surface. The asymmetry in hysteresis is found to be more prominent in a inverse core-shell structure, where spin interaction in the core is antiferromagnetic and that in the shell is ferromagnetic. These studied of inverse core-shell structure are extended to different shapes, sizes, and different spin interactions, namely Ising, XY- and Heisenberg models in three dimension. We also briefly discuss the pinning effects on magnetic heterostructures.
The synthesis and characterization of PVA (Poly Vinyl Acetate) doped bulk MgB2 superconductor is reported here. PVA is used as a Carbon source. PVA doping effects made two distinguishable contributions: first enhancement of Jc field performance and second an increase in Hc2 value, both because of carbon incorporation into MgB2 crystal lattice. The susceptibility measurement reveals that Tc decreased from 37 to 36 K. Lattice parameter a decreased from 3.085 A to 3.081 A due to the partial substitution of Carbon at Boron site. PVA doped sample exhibited the Jc values greater than 10^5 A/cm2 at 5 & 10 K at low fields; which is almost 3 times higher than the pure one, while at high fields the Jc is increased by an order of magnitude in comparison to pure MgB2. From R(T)H measurements we found higher Tc values under magnetic field for doped sample; indicating an increase in Hc2. Also the magnetization measurements exhibited a significant enhancement in Hirr value. The improved performance of PVA doped MgB2 can be attributed to the substitution of carbon at boron site in parent MgB2 and the resulting impact on the carrier density and impurity scattering. The improved flux pinning behavior could easily be seen from reduced flux pinning force plots.
We study the disorder effect of resonant spin Hall effect in a two-dimension electron system with Rashba coupling in the presence of a tilted magnetic field. The competition between the Rashba coupling and the Zeeman coupling leads to the energy crossing of the Landau levels, which gives rise to the resonant spin Hall effect. Utilizing the Stredas formula within the self-consistent Born approximation, we find that the impurity scattering broadens the energy levels, and the resonant spin Hall conductance exhibits a double peak around the resonant point, which is recovered in an applied titled magnetic field.
The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system where both electron and hole densities exactly coincide) is defined by strong electron-hole scattering. It has a universal value independent of temperature. We give an explicit derivation based on scaling theory. When there is even a small discrepancy in electron and hole densities caused by applied gate voltage the conductivity is determined by both strong electron-hole scattering and weak external scattering: on defects or phonons. We suggest that a density of charged defects (occupancy of defects) depends on Fermi energy to explain a sub-linear dependence of conductivity on a fairly high gate voltage observed in experiments. We also eliminate contradictions between experimental data obtained in deposited and suspended graphene structures regarding graphene conductivity.
We consider the effect of electron-electron interactions on a voltage biased quantum point contact in the tunneling regime used as a detector of a nearby qubit. We model the leads of the quantum point contact as Luttinger liquids, incorporate the effects of finite temperature and analyze the detection-induced decoherence rate and the detector efficiency, $Q$. We find that interactions generically reduce the induced decoherence along with the detectors efficiency, and strongly affect the relative strength of the decoherence induced by tunneling and that induced by interactions with the local density. With increasing interaction strength, the regime of quantum-limited detection ($Q=1$) is shifted to increasingly lower temperatures or higher bias voltages respectively. For small to moderate interaction strengths, $Q$ is a monotonously decreasing function of temperature as in the non-interacting case. Surprisingly, for sufficiently strong interactions we identify an intermediate temperature regime where the efficiency of the detector increases with rising temperature.
Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior.