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Register a new userEfficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance
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The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC) have the potential to surpass the efficiency of standard single-junction solar cells by allowing sub-gap photon absorption through states deep inside the band gap. High efficiency IBSC and QRSC devices have not yet been achieved, however, since introducing mid-gap states also increases recombination, which can harm the device. We consider the electronically coupled upconverter (ECUC) solar cell and show that it can achieve the same efficiencies as the QRSC. Although they are equivalent in the detailed balance limit, the ECUC is less sensitive to nonradiative processes, which makes it a more practical implementation for IB devices. We perform a case study of crystalline-silicon based ECUC cells, focusing on hydrogenated amorphous silicon as the upconverter material and highlighting potential dopants for the ECUC. These results illustrate a new path for the development of IB-based devices.
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The quantum well solar cell (QWSC) has been proposed as a flexible means to ensuring current matching for tandem cells. This paper explores the further advantage afforded by the indication that QWSCs operate in the radiative limit because radiative contribution to the dark current is seen to dominate in experimental data at biases corresponding to operation under concentration. The dark currents of QWSCs are analysed in terms of a light and dark current model. The model calculates the spectral response (QE) from field bearing regions and charge neutral layers and from the quantum wells by calculating the confined densities of states and absorption coefficient, and solving transport equations analytically. The total dark current is expressed as the sum of depletion layer and charge neutral radiative and non radiative currents consistent with parameter values extracted from QE fits to data. The depletion layer dark current is a sum of Shockley-Read-Hall non radiative, and radiative contributions. The charge neutral region contribution is expressed in terms of the ideal Shockley radiative and non-radiative currents modified to include surface recombination. This analysis shows that the QWSC is inherently subject to the fundamental radiative efficiency limit at high currents where the radiative dark current dominates, whereas good homojunction cells are well described by the ideal Shockley picture where the limit is determined by radiative and non radiative recombination in the charge neutral layers of the cell.
The thermodynamic limit of photovoltaic efficiency for a single-junction solar cell can be readily predicted using the bandgap of the active light absorbing material. Such an approach overlooks the energy loss due to non-radiative electron-hole processes. We propose a practical ab initio procedure to determine the maximum efficiency of a thin-film solar cell that takes into account both radiative and non-radiative recombination. The required input includes the frequency-dependent optical absorption coefficient, as well as the capture cross-sections and equilibrium populations of point defects. For kesterite-structured Cu$_2$ZnSnS$_4$, the radiative limit is reached for a film thickness of around 2.6 micrometer, where the efficiency gain due to light absorption is counterbalanced by losses due to the increase in recombination current.
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photoresponse from terahertz (THz) to near infrared (NIR) region (4-200 THz) was realized that covers a much wider frequency range com-pared with the existing upconversion devices. Broadband IR/THz radiation from 1000 K blackbody is successfully upconverted into NIR photons which can be detected by commercial Si-based device. The normal incidence absorption of the RP simplifies the structure of the RP-LED device and make it more compact compared with the inter-subband transition based upconverters. In addition to the up-conversion function, the proposed upconverter is also tested as photovoltaic detectors in the infrared region (15-200 THz) without an applied bias voltage due to the ratchet effect.
Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental instability remains the Achilles heel of this technology. In this work, we demonstrate that the degradation processes in PbS QDs which are exposed to oxygenated environments are tightly related to the choice of ligands, rather than their intrinsic properties. In particular, we demonstrate that while 1,2-ethanedithiol (EDT) ligands result in significant oxidation of PbS, lead iodide/lead bromide (PbX2) coated PbS QDs show no signs of oxidation or degradation. Consequently, since the former is ubiquitously used as a hole extraction layer in QD solar cells, it is predominantly responsible for the device performance evolution. The oxidation of EDT-PbS QDs results in a significantly reduced effective QD size, which triggers two competing processes: improved energetic alignment that enhances electron blocking, but reduced charge transport through the layer. At early times, the former process dominates, resulting in the commonly reported, but so far not fully explained initial increase in performance, while the latter governs the onset of degradation and deterioration of the photovoltaic performance. Our work highlights that the stability of PbS quantum dot solar cells can be significantly enhanced by an appropriate choice of ligands for all device components.
The power conversion efficiency of an ultrathin CIGS solar cell was maximized using a coupled optoelectronic model to determine the optimal bandgap grading of the nonhomogeneous CIGS layer in the thickness direction. The bandgap of the CIGS layer was either sinusoidally or linearly graded, and the solar cell was modeled to have a metallic backreflector corrugated periodically along a fixed direction in the plane. The model predicts that specially tailored bandgap grading can significantly improve the efficiency, with much smaller improvements due to the periodic corrugations. An efficiency of 27.7% with the conventional 2200-nm-thick CIGS layer is predicted with sinusoidal bandgap grading, in comparison to 22% efficiency obtained experimentally with homogeneous bandgap. Furthermore, the inclusion of sinusoidal grading increases the predicted efficiency to 22.89% with just a 600-nm-thick CIGS layer. These high efficiencies arise due to a large electron-hole-pair generation rate in the narrow-bandgap regions and the elevation of the open-circuit voltage due to a wider bandgap in the region toward the front surface of the CIGS layer. Thus, bandgap nonhomogeneity, in conjunction with periodic corrugation of the backreflector, can be effective in realizing ultrathin CIGS solar cells that can help overcome the scarcity of indium.
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