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Register a new userAnomalous localization at the boundary of an interacting topological insulator
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The boundary of a topological insulator (TI) hosts an anomaly restricting its possible phases: e.g. 3D strong and weak TIs maintain surface conductivity at any disorder if symmetry is preserved on-average, at least when electron interactions on the surface are weak. However the interplay of strong interactions and disorder with the boundary anomaly has not yet been theoretically addressed. Here we study this combination for the edge of a 2D TI and the surface of a 3D weak TI, showing how it can lead to an Anomalous Many Body Localized (AMBL) phase that preserves the anomaly. We discuss how the anomalous Kramers parity switching with pi flux arises in the bosonized theory of the localized helical state. The anomaly can be probed in localized boundaries by electrostatically sensing nonlinear hopping transport with e/2 shot noise. Our AMBL construction in 3D weak TIs fails for 3D strong TIs, suggesting that their anomaly restrictions are distinguished by strong interactions.
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The low-temperature Hall resistivity rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holsteins model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.
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