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Register a new userNon-linear Nernst effect in bilayer WTe$_2$
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Unlike the conventional (linear) anomalous Nernst effect, the non-linear anomalous Nernst effect (NLANE) can survive in an inversion symmetry broken system even in the presence of time-reversal symmetry. Using semiclassical Boltzmann transport theory, we derive the general expression of the non-linear anomalous Nernst coefficient as the second-order response function to the applied temperature gradient. We find that the non-linear Nernst current, which flows perpendicular to the temperature gradient even in the absence of a magnetic field, arises due to the Berry curvature of the states near the Fermi surface, and thus is associated with purely a Fermi surface contribution. We apply these results to bilayer WTe$_2$, which is an inversion broken but time reversal symmetric type-II Weyl semimetal supporting chiral Weyl fermions. By tuning the spin-orbit coupling, we show that the sign of the NLANE can change in this system. Together with the angular dependence, we calculate the temperature and chemical potential dependencies of NLANE in bilayer WTe$_2$, and predict specific experimental signatures that can be checked in experiments.
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The spin Hall effect allows generation of spin current when charge current is passed along materials with large spin orbit coupling. It has been recently predicted that heat current in a non-magnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. Here we report the observation of the spin Nernst effect in W. In W/CoFeB/MgO heterostructures, we find changes in the longitudinal and transverse voltages with magnetic field when temperature gradient is applied across the film. The field-dependence of the voltage resembles that of the spin Hall magnetoresistance. A comparison of the temperature gradient induced voltage and the spin Hall magnetoresistance allows direct estimation of the spin Nernst angle. We find the spin Nernst angle of W to be similar in magnitude but opposite in sign with its spin Hall angle. Interestingly, under an open circuit condition, such sign difference results in spin current generation larger than otherwise. These results highlight the distinct characteristics of the spin Nernst and spin Hall effects, providing pathways to explore materials with unique band structures that may generate large spin current with high efficiency.
Magnon spin Nernst effect was recently proposed as an intrinsic effect in antiferromagnets, where spin diffusion and boundary spin transmission have been ignored. However, diffusion processes are essential to convert a bulk spin current into boundary spin accumulation, which determines the spin injection rate into detectors through imperfect transmission. We formulate a diffusive theory of the magnon spin Nernst effect with boundary conditions reflecting real device geometry. Thanks to the diffusion effect, the output signals in both electronic and optical detection grow rapidly with an increasing system size in the transverse dimension, which eventually saturate. Counterintuitively, the measurable signals are even functions of magnetic field, yielding optical detection more reliable than electronic detection.
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) 1T-WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS), to study twisted bilayer (tBL) WTe$_2$ with three different orientations and compare it to a topologically trivial as-grown bilayer. We observe the characteristic spectroscopic signature of the QSH edge state in the twisted bilayers, including along a coinciding edge where two sets of QSH edge states sit on top of the other. By comparing our experimental observations to first principles calculations, we conclude that the twisted bilayers are weakly coupled, preserving the QSH states and preventing back scattering.
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50~K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50~K, which might be the direct driving force of the electron-hole ``compensation and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.
Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale.
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