Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the experimental data over a wide range of carrier densities. It demonstrates the predominance of carrier scattering by low energy transverse acoustic (TA) mode phonons: the magnetophonon resonance amplitude is significantly stronger for the TA modes than for the longitudinal acoustic (LA) modes. We demonstrate that the LA and TA phonon speeds and the electron-phonon coupling strengths determined from the magnetophonon resonance measurements also provide an excellent fit to the measured dependence of the resistivity at zero magnetic field over a temperature range of 4-150 K. A semiclassical description of magnetophonon resonance in graphene is shown to provide a simple physical explanation for the dependence of the magneto-oscillation period on carrier density. The correspondence between the quantum calculation and the semiclassical model is discussed.
We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $Tproptosqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Sigma$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Sigma$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.
Recent theory has predicted large temperature differences between the in-plane (LA and TA) and out-of-plane (ZA) acoustic phonon baths in locally-heated suspended graphene. To verify these predictions, and their implications for understanding the nonequilibrium thermodynamics of 2D materials, experimental techniques are needed. Here, we present a method to determine the acoustic phonon bath temperatures from the frequency-dependent mechanical response of suspended graphene to a power modulated laser. The mechanical motion reveals two counteracting contributions to the thermal expansion force, that are attributed to fast positive thermal expansion by the in-plane phonons and slower negative thermal expansion by the out-of-plane phonons. The magnitude of the two forces reveals that the in-plane and flexural acoustic phonons are at very different temperatures in the steady-state, with typically observed values of the ratio $Delta T_{mathrm{LA+TA}}/Delta T_{mathrm{ZA}}$ between 0.2 and 3.7. These deviations from the generally used local thermal equilibrium assumption ($Delta T_{mathrm{LA+TA}}=Delta T_{mathrm{ZA}}$) can affect the experimental analysis of thermal properties of 2D materials.
The ability to localize and manipulate individual quasiparticles in mesoscopic structures is critical in experimental studies of quantum mechanics and thermodynamics, and in potential quantum information devices, e.g., for topological schemes of quantum computation. In strong magnetic field, the quantum Hall edge modes can be confined around the circumference of a small antidot, forming discrete energy levels that have a unique ability to localize fractionally charged quasiparticles. Here, we demonstrate a Dirac fermion quantum Hall antidot in graphene in the integer quantum Hall regime, where charge transport characteristics can be adjusted through the coupling strength between the contacts and the antidot, from Coulomb blockade dominated tunneling under weak coupling to the effectively non-interacting resonant tunneling under strong coupling. Both regimes are characterized by single -flux and -charge oscillations in conductance persisting up to temperatures over 2 orders of magnitude higher than previous reports in other material systems. Such graphene quantum Hall antidots may serve as a promising platform for building and studying novel quantum circuits for quantum simulation and computation.
We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future.
Three dimensionally curved graphene with a wide range of curvature radii from 25 nm to 1000 nm demonstrates that nano-scale curvature is a new degree of freedom to tune the transport properties of graphene by manipulating 2D electron kinetics on 3D curved surfaces.