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Register a new userVisualizing electrostatic gating effects in two-dimensional heterostructures
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The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.
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Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability. However, remote control of a FET device through a gate electrode placed far away is always highly desired, because it not only reduces the complexity of device fabrication, but also enables designing novel devices with new functionalities. Here, a non-local gating effect in graphene using both near-field optical nano-imaging and electrical transport measurement is reported. With assistance of absorbed water molecules, the charge density of graphene can be efficiently tuned by a local-gate placed over 30 {mu}m away. The observed non-local gating effect is initially driven by an in-plane electric field established between graphene regions with different charge densities due to the quantum capacitance near the Dirac point in graphene. The nonlocality is further amplified and largely enhanced by absorbed water molecules through screening the in-plane electric field and expending the transition length. This research reveals novel non-local phenomenon of Dirac electrons, and paves the way for designing electronic devices with remote-control using 2D materials with small density of states.
Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.
Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($sim$ $10^{14}$ cm$^{-2}$) CGT in an electric double-layer transistor device is found to exhibit hysteresis in magnetoresistance (MR), a clear signature of ferromagnetism, at temperatures up to above 200 K, which is significantly higher than the known Curie temperature of 61 K for an undoped material. Additionally, angle-dependent MR measurements reveal that the magnetic easy axis of this new ground state lies within the layer plane in stark contrast to the case of undoped CGT, whose easy axis points in the out-of-plane direction. We propose that significant doping promotes double-exchange mechanism mediated by free carriers, prevailing over the superexchange mechanism in the insulating state. Our findings highlight that electrostatic gating of this class of materials allows not only charge flow switching but also magnetic phase switching, evidencing their potential for spintronics applications.
The gating effect achieved by an ionic liquid and its electric double layer allows for charge transfer which can be an order of magnitude larger than with conventional dielectrics. However, the large charged ions also causes inevitable Coulomb scattering in the conducting channel formed at the interface, which can limit the carrier mobility enhancement. In this work, we study the effect of the LaAlO3 thickness on the transport properties in LaAlO3/SrTiO3 heterostructures by ionic liquid gating. We find that the transport properties of the LaAlO3/SrTiO3 interface are dominated by the intrinsic interactions rather than the LaAlO3 thickness and possible effects from the ions in the liquid. We observe a Kondo effect, which is enhanced while increasing the gate voltage. We also observe a gate-tunable and temperature-dependent anomalous Hall effect, which always emerges near the Kondo temperature. Our experiments pave the way to manipulate the various magnetic interactions in LaAlO3/SrTiO3 heterostructures.
The wavefunctions of a disordered two-dimensional electron gas at the quantum-critical Anderson transition are predicted to exhibit multifractal scaling in their real space amplitude. We experimentally investigate the appearance of these characteristics in the spatially resolved local density of states of a two-dimensional mixed surface alloy Bi_xPb_{1-x}/Ag(111), by combining high-resolution scanning tunneling microscopy with spin and angle-resolved inverse-photoemission experiments. Our detailed knowledge of the surface alloy electronic band structure, the exact lattice structure and the atomically resolved local density of states enables us to construct a realistic Anderson tight binding model of the mixed surface alloy, and to directly compare the measured local density of states characteristics with those from our model calculations. The statistical analyses of these two-dimensional local density of states maps reveal their log-normal distributions and multifractal scaling characteristics of the underlying wavefunctions with a finite anomalous scaling exponent. Finally, our experimental results confirm theoretical predictions of an exact scaling symmetry for Anderson quantum phase transitions in the Wigner-Dyson classes.
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