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We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates from the anionic electrons rather than partially filled d orbitals, which is fundamentally different from ferromagnetism found in other 2D intrinsic magnetic materials. Taking the honeycomb LaBr$_2$ (La$^{3+}$Br$^{-}_{2}cdot e^{-}$) as an example, our calculations reveal that the excess electron is localized at the center of the hexagon, which leads to strong Stoner-instability of the associated states at the Fermi energy, resulting in spontaneous magnetization and formation of a local moment. The overlap of extended tails of the wave functions of these electrons mediates a long-range ferromagnetic interaction, contributing to a Curie temperature ($T_textrm{c}$) of 235 K and a coercive field ($H_textrm{c}$) of 0.53 T, which can be further enhanced by hole doping. The dual nature, localization and extension, of the electronic states suggests a unique mechanism in such magnetic-element-free electrenes as intrinsic 2D ferromagnets.
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The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 C revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The X-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance was observed in the conductive layers up to room temperature. Magnetoresistance measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 C are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least room temperature in case of the conductive layer obtained at 200 C. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.
The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $rho_{xy}^{mathrm{AH}}$ relative to crystalline FeGe; this $rho_{xy}^{mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 leq x leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.
Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with the thickness of the SrTiO3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO3.
We observe interfacial ferromagnetism in superlattices of the paramagnetic metal LaNiO3 and the antiferromagnetic insulator CaMnO3. LaNiO3 exhibits a thickness dependent metal-insulator transition and we find the emergence of ferromagnetism to be coincident with the conducting state of LaNiO3. That is, only superlattices in which the LaNiO3 layers are metallic exhibit ferromagnetism. Using several magnetic probes, we have determined that the ferromagnetism arises in a single unit cell of CaMnO3 at the interface. Together these results suggest that ferromagnetism can be attributed to a double exchange interaction among Mn ions mediated by the adjacent itinerant metal.
Results are presented of single crystal structural, thermodynamic, and reflectivity measurements of the double-perovskite Ba2NaOsO6. These characterize the material as a 5d^1 ferromagnetic Mott insulator with an ordered moment of ~0.2 Bohr magnetons per formula unit and TC = 6.8(3) K. The magnetic entropy associated with this phase transition is close to Rln2, indicating that the quartet groundstate anticipated from consideration of the crystal structure is split, consistent with a scenario in which the ferromagnetism is associated with orbital ordering.
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