Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userIntrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
122
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.
rate research
Read More
Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te-Bi-Te-Mn-Te-Bi-Te sequences as determined by powder X-ray diffraction (PXRD) and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. The transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. Moreover, the unstable surface of MnBi2Te4, which is found to be easily oxidized in air, deserves attention for onging research on few-layer samples. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).
The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.
The polarity-tunable anomalous Hall effect (AHE) is useful for electronic device applications. Here in a magnetic topological insulator MnBi2Te4 grown by molecular beam epitaxy, we report the polarity change of the AHE by increasing the temperature or tuning the gate bias. This is possible because the anomalous Hall response is composed of two competing contributions with opposite polarities. The negative contribution is intrinsic to MnBi2Te4, follows an ambipolar gate response and has a larger coercivity with increasing thickness. Meanwhile, the positive one has a coercivity that is about one order of magnitude greater than the negative one, dominates the Hall response at higher temperatures, is more tunable by a gate bias and vanishes by increasing the thickness of the thin film. One possible explanation for the additional positive AHE is an extra surface ferromagnetism caused by the surface-state-mediated RKKY interaction among magnetic impurities on the surface. Our work provides the understanding of the AHE of MnBi2Te4, and paves the way for many device applications, e.g. energy-efficient voltage-controlled memory.
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed electronic structures observed in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4, and clearly identified its topological electronic structures including the characteristic gapless topological surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and surface states, respectively. The identification of the detailed electronic structures of MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.
We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
