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Resonantly enhanced nonreciprocal silicon Brillouin amplifier

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 Added by Nils Otterstrom
 Publication date 2019
  fields Physics
and research's language is English




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The ability to amplify light within silicon waveguides is central to the development of high-performance silicon photonic device technologies. To this end, the large optical nonlinearities made possible through stimulated Brillouin scattering offer a promising avenue for power-efficient all-silicon amplifiers, with recent demonstrations producing several dB of net amplification. However, scaling the degree of amplification to technologically compelling levels (>10 dB), necessary for everything from filtering to small signal detection, remains an important goal. Here, we significantly enhance the Brillouin amplification process by harnessing an inter-modal Brillouin interaction within a multi-spatial-mode silicon racetrack resonator. Using this approach, we demonstrate more than 20 dB of net Brillouin amplification in silicon, advancing state-of-the-art performance by a factor of 30. This degree of amplification is achieved with modest (~15 mW) continuous-wave pump powers and produces low out-of-band noise. Moreover, we show that this same system behaves as a unidirectional amplifier, providing more than 28 dB of optical nonreciprocity without insertion loss in an all-silicon platform. Building on these results, this device concept opens the door to new types of all-silicon injection-locked Brillouin lasers, high-performance photonic filters, and waveguide-compatible distributed optomechanical phenomena.



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Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are exceedingly weak in conventional silicon photonic waveguides, stifling progress towards silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. Here, we harness these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters an intriguing regime of dynamics, in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.
Integrated silicon microwave photonics offers great potential in microwave phase shifter elements, and promises compact and scalable multi-element chips that are free from electromagnetic interference. Stimulated Brillouin scattering, which was recently demonstrated in silicon, is a particularly powerful approach to induce a phase shift due to its inherent flexibility, offering an optically controllable and selective phase shift. However, to date, only moderate amounts of Brillouin gain has been achieved and theoretically this would restrict the phase shift to a few tens of degrees, significantly less than the required 360 degrees. Here, we overcome this limitation with a phase enhancement method using RF interference, showing a 360 degrees broadband phase shifter based on Brillouin scattering in a suspended silicon waveguide. We achieve a full 360 degrees phase-shift over a bandwidth of 15 GHz using a phase enhancement factor of 25, thereby enabling practical broadband Brillouin phase shifter for beam forming and other applications.
Stimulated Brillouin scattering (SBS) has been demonstrated in silicon waveguides in recent years. However, due to the weak interaction between photons and acoustic phonons in these waveguides, long interaction length is typically necessary. Here, we experimentally show that forward stimulated Brillouin scattering in a short interaction length of a 20 um radius silicon microring resonator could give 1.2 dB peak gain at only 10mW coupled pump power. The experimental results demonstrate that both optical and acoustic modes can have efficient interaction in a short interaction length. The observed Brillouin gain varies with coupled pump power in good agreement with theoretical prediction. The work shows the potential of SBS in silicon for moving the demonstrated fiber SBS applications to the integrated silicon photonics platform.
We introduce a new theoretical approach for analyzing pump and probe experiments in non-linear acousto-optic systems. In our approach, the effect of coherently pumped polaritons is modeled as providing time-periodic modulation of the system parameters. Within this framework, propagation of the probe pulse is described by the Floquet version of Maxwells equations and leads to such phenomena as frequency mixing and resonant parametric production of polariton pairs. We analyze light reflection from a slab of insulating material with a strongly excited phonon-polariton mode and obtain analytic expressions for the frequency-dependent reflection coefficient for the probe pulse. Our results are in agreement with recent experiments by Cartella et al. which demonstrated light amplification in resonantly excited SiC insulator. We show that, beyond a critical pumping strength, such systems should exhibit Floquet parametric instability, which corresponds to resonant scattering of the pump polaritons into pairs of finite momentum polaritons. We find that the parametric instability should be achievable in SiC using current experimental techniques and discuss its signatures, including the non-analytic frequency dependence of the reflection coefficient and the probe pulse afterglow. We discuss possible applications of the parametric instability phenomenon and suggest that similar types of instabilities can be present in other photoexcited non-linear systems.
Realization of chip-scale nonreciprocal optics such as isolators and circulators is highly demanding for all-optical signal routing and protection with standard photonics foundry process. Owing to the significant challenge for incorporating magneto-optical materials on chip, the exploration of magnetic-free alternatives has become exceedingly imperative in integrated photonics. Here, we demonstrate a chip-based, tunable all-optical isolator at the telecommunication band based upon bulk stimulated Brillouin scattering (SBS) in a high-Q silica microtoroid resonator. This device exhibits remarkable characteristics over most state-of-the-art implements, including high isolation ratio, no insertion loss, and large working power range. Thanks to the guided acoustic wave and accompanying momentum-conservation condition, SBS also enables us to realize the first nonreciprocal parity-time symmetry in two directly-coupled microresonators. The breach of time-reversal symmetry further makes the design a versatile arena for developing many formidable ultra-compact devices such as unidirectional single-mode Brillouin lasers and supersensitive photonic sensors.
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