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Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are exceedingly weak in conventional silicon photonic waveguides, stifling progress towards silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. Here, we harness these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters an intriguing regime of dynamics, in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.
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Over the last decade, optical atomic clocks have surpassed their microwave counterparts and now offer the ability to measure time with an increase in precision of two orders of magnitude or more. This performance increase is compelling not only for enabling new science, such as geodetic measurements of the earth, searches for dark matter, and investigations into possible long-term variations of fundamental physics constants but also for revolutionizing existing technology, such as the global positioning system (GPS). A significant remaining challenge is to transition these optical clocks to non-laboratory environments, which requires the ruggedization and miniaturization of the atomic reference and clock laser along with their supporting lasers and electronics. Here, using a compact stimulated Brillouin scattering (SBS) laser to interrogate a $^8$$^8$Sr$^+$ ion, we demonstrate a promising component of a portable optical atomic clock architecture. In order to bring the stability of the SBS laser to a level suitable for clock operation, we utilize a self-referencing technique to compensate for temperature drift of the laser to within $170$ nK. Our SBS optical clock achieves a short-term stability of $3.9 times 10^{-14}$ at $1$ s---an order of magnitude improvement over state-of-the-art microwave clocks. Based on this technology, a future GPS employing portable SBS clocks offers the potential for distance measurements with a 100-fold increase in resolution.
The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics. The creation of such low-noise laser sources is critical for emerging on-chip applications, ranging from coherent optical communications, photonic microwave oscillators remote sensing and optical rotational sensors. While Brillouin lasers are a promising solution to these challenges, new strategies are needed to create robust, compact, low power and low cost Brillouin laser technologies through wafer-scale integration. To date, chip-scale Brillouin lasers have remained elusive due to the difficulties in realization of these lasers on a commercial integration platform. In this paper, we demonstrate, for the first time, monolithically integrated Brillouin lasers using a wafer-scale process based on an ultra-low loss Si3N4/SiO2 waveguide platform. Cascading of stimulated Brillouin lasing to 10 Stokes orders was observed in an integrated bus-coupled resonator with a loaded Q factor exceeding 28 million. We experimentally quantify the laser performance, including threshold, slope efficiency and cascading dynamics, and compare the results with theory. The large mode volume integrated resonator and gain medium supports a TE-only resonance and unique 2.72 GHz free spectral range, essential for high performance integrated Brillouin lasing. The laser is based on a non-acoustic guiding design that supplies a broad Brillouin gain bandwidth. Characteristics for high performance lasing are demonstrated due to large intra-cavity optical power and low lasing threshold power. Consistent laser performance is reported for multiple chips across multiple wafers. This design lends itself to wafer-scale integration of practical high-yield, highly coherent Brillouin lasers on a chip.
Integrated silicon microwave photonics offers great potential in microwave phase shifter elements, and promises compact and scalable multi-element chips that are free from electromagnetic interference. Stimulated Brillouin scattering, which was recently demonstrated in silicon, is a particularly powerful approach to induce a phase shift due to its inherent flexibility, offering an optically controllable and selective phase shift. However, to date, only moderate amounts of Brillouin gain has been achieved and theoretically this would restrict the phase shift to a few tens of degrees, significantly less than the required 360 degrees. Here, we overcome this limitation with a phase enhancement method using RF interference, showing a 360 degrees broadband phase shifter based on Brillouin scattering in a suspended silicon waveguide. We achieve a full 360 degrees phase-shift over a bandwidth of 15 GHz using a phase enhancement factor of 25, thereby enabling practical broadband Brillouin phase shifter for beam forming and other applications.
The ability to amplify light within silicon waveguides is central to the development of high-performance silicon photonic device technologies. To this end, the large optical nonlinearities made possible through stimulated Brillouin scattering offer a promising avenue for power-efficient all-silicon amplifiers, with recent demonstrations producing several dB of net amplification. However, scaling the degree of amplification to technologically compelling levels (>10 dB), necessary for everything from filtering to small signal detection, remains an important goal. Here, we significantly enhance the Brillouin amplification process by harnessing an inter-modal Brillouin interaction within a multi-spatial-mode silicon racetrack resonator. Using this approach, we demonstrate more than 20 dB of net Brillouin amplification in silicon, advancing state-of-the-art performance by a factor of 30. This degree of amplification is achieved with modest (~15 mW) continuous-wave pump powers and produces low out-of-band noise. Moreover, we show that this same system behaves as a unidirectional amplifier, providing more than 28 dB of optical nonreciprocity without insertion loss in an all-silicon platform. Building on these results, this device concept opens the door to new types of all-silicon injection-locked Brillouin lasers, high-performance photonic filters, and waveguide-compatible distributed optomechanical phenomena.
Ultralow noise, yet tunable lasers are a revolutionary tool in precision spectroscopy, displacement measurements at the standard quantum limit, and the development of advanced optical atomic clocks. Further applications include LIDAR, coherent communications, frequency synthesis, and precision sensors of strain, motion, and temperature. While all applications benefit from lower frequency noise, many also require a laser that is robust and compact. Here, we introduce a dual-microcavity laser that leverages one chip-integrable silica microresonator to generate tunable 1550 nm laser light via stimulated Brillouin scattering (SBS) and a second microresonator for frequency stabilization of the SBS light. This configuration reduces the fractional frequency noise to $7.8times10^{-14} 1/sqrt{Hz}$ at 10 Hz offset, which is a new regime of noise performance for a microresonator-based laser. Our system also features terahertz tunability and the potential for chip-level integration. We demonstrate the utility of our dual-microcavity laser by performing optical spectroscopy with hertz-level resolution.
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