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Register a new userEffect of electron irradiation and Pr doping on the charge transport in YBCO single crystals
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Added by
Oleksandr Dobrovolskiy V.
Publication date
2019
fields
Physics
and research's language is
English
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The influence of irradiation by electrons with energies of $0.5-2.5$,MeV at temperatures of about $10$,K on the basal-plane resistivity of the YBa$_2$Cu$_3$O$_{7-delta}$ single crystals is investigated in the range from $T_c$ to $300$,K. The resistivity temperature dependence is determined by defects arising due to the irradiation. These defects directly affect the superconducting transition, decreasing $T_c$ and increasing the transition width without significant distortions of its shape. The resulting defects also lead to an increase in the Debye temperature due to a reduction of the anisotropy, and a noticeable increase in the scattering by phonons in the sample. The excess conductivity does not change with the irradiation used.
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Irradiation with electrons is an efficient approach to inducing a large number of defects with a minimal impact on the material itself. Analysis of the energy transfer from an accelerated particle smashing into the crystal lattice shows that only electrons with MeV energies produce point defects in the form of interstitial ions and vacancies that form perfect scattering centers. Here, we investigate the changes in the resistive characteristics of YBCO single crystals from the 1-2-3 system after several steps of low-temperature irradiation with $0.5-2.5$,MeV electrons and irradiation doses of up to $8.8times10^{18}$,cm$^{-2}$. The penetration depth of such electrons is much larger than the crystal thickness. We reveal that defects appearing in consequence of such electron irradiation not only increase the residual resistance, but they affect the phonon spectrum of the system and lower the superconducting transition temperature linearly with increase of the irradiation dose. Furthermore, the irradiation-induced defects are distributed non-uniformly, that manifests itself via a broadening of the superconducting transition. Interestingly, the excess conductivity remains almost unaffected after such electron irradiation.
The effects of pressure generated in a liquid medium, clamp, pressure cell on the in-plane and c-axis resistance, temperature-dependent Hall coefficient and low temperature, magnetoresistance in CaFe2As2 are presented. The T - P phase diagram, including the observation of a complete superconducting transition in resistivity, delineated in earlier studies is found to be highly reproducible. The Hall resistivity and low temperature magnetoresistance are sensitive to different states/phases observed in CaFe2As2. Auxiliary measurements under uniaxial, c-axis, pressure are in general agreement with the liquid medium clamp cell results with some difference in critical pressure values and pressure derivatives. The data may be viewed as supporting the potential importance of non-hydrostatic components of pressure in inducing superconductivity in CaFe2As2.
In order to clarify the origin of anomalous superconductivity in (Ca,RE)Fe2As2 system, Pr doped and Pr,Co co-doped CaFe2As2 single crystals were grown by the FeAs flux method. These samples showed two-step superconducting transition with Tc1 = 25~42 K, and Tc2 < 16 K, suggesting that (Ca,RE)Fe2As2 system has two superconducting components. Post-annealing performed for these crystals in evacuated quartz ampoules at various temperatures revealed that post-annealing at ~400{deg}C increased the c-axis length for all samples. This indicates that as-grown crystals have a certain level of strain, which is released by post-annealing at ~400{deg}C. Superconducting properties also changed dramatically by post-annealing. After annealing at 400{deg}C, some of the co-doped samples showed large superconducting volume fraction corresponding to the perfect diamagnetism below Tc2 and high Jc values of 104~105 Acm-2 at 2 K in low field, indicating the bulk superconductivity of (Ca,RE)Fe2As2 phase occurred below Tc2. On the contrary, the superconducting volume fraction above Tc2 was always very small, suggesting that 40 K-class superconductivity observed in this system is originating in the local superconductivity in the crystal.
The London penetration depth was measured in optimally doped Ba0.6K0.4Fe2As2 crystals, with and without columnar defects produced by 1.4 GeV 208Pb irradiation. The low temperature behavior of unirradiated samples was consistent with a fully gapped superconducting state with a minimum energy gap delta_min/(k_B T_C) = 1. Similar gap values were observed for irradiation levels corresponding to mean column-column separations of 32 nm and 22 nm. At very high irradiation levels (column-column separation of 10 nm) a T^2 power law was observed below Tc/3, most likely due to elevated scattering. Neither the location nor the sharpness of the superconducting transition was affected by irradiation. The data provides evidence for an s+/- pairing state.
We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.
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