Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTerahertz Plasmonic Detector Controlled by Phase Asymmetry
122
0
0.0
(
0
)
Added by
Valentin Kachorovskii
Publication date
2019
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz range of frequencies. We also propose an effective scheme of a phase-sensitive homodyne detector operating in a phase-asymmetry mode, which allows for a dramatic enhancement of the response. These regimes can be implemented in different materials systems including silicon. The p-diamond TeraFETs could support operation in the 200 to 600 GHz atmospheric windows.
rate research
Read More
We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function of the frequency deviation from the resonance. In contrast, the helicity-insensitive part of the response is symmetrical. These properties yield significant advantage for using plasmonic detectors as terahertz and far infrared spectrometers and interferometers.
Quantum dots optically excited in close proximity to a silver nanowire can launch nanowire surface plasmons. The challenge related to this promising hybrid system is to control the position of nanoemitters on the nanowire. We report on the use of two-photon photopolymerization process to strategically position quantum dots on nanowires at controlled sites. A parametric study of the distance between the quantum dots and the nanowire extremity shows that precise control of the position of the launching sites enables control of light intensity at the wire end, through surface plasmon propagation.
Using a dual-mode STM-AFM microscope operating below 50mK we measured the Local Density of States (LDoS) along small normal wires connected at both ends to superconductors with different phases. We observe that a uniform minigap can develop in the whole normal wire and in the superconductors near the interfaces. The minigap depends periodically on the phase difference. The quasiclassical theory of superconductivity applied to a simplified 1D model geometry accounts well for the data.
Acoustic vibrations at the nanoscale (GHz-THz frequencies) and their interactions with electrons, photons and other excitations are the heart of an emerging field in physics: nanophononics. The design of ultrahigh frequency acoustic-phonon transducers, with tunable frequency, and easy to integrate in complex systems is still an open and challenging problem for the development of acoustic nanoscopies and phonon lasers. Here we show how an optimized plasmonic metasurface can act as a high-frequency phonon transducer. We report pump-probe experiments in metasurfaces composed of an array of gold nanostructures, revealing that such arrays can act as efficient and tunable photon-phonon transducers, with a strong spectral dependence on the excitation rate and laser polarization. We anticipate our work to be the starting point for the engineering of phononic metasurfaces based on plasmonic nanostructures.
We discuss how a single Cooper-pair transistor may be used to detect the superconducting phase difference by using the phase dependence of the input capacitance from gate to the ground. The proposed device has a low power dissipation because its operation is in principle free from quasiparticle generation. According to the sensitivity estimates the device may be used for efficient qubit readout in a galvanically isolated and symmetrized circuit.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
