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Register a new userDramatic increase in the thermal boundary conductance and radiation limit from a Nonequilibrium Landauer Approach
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Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed theoretical results or even the absolute upper limit called the ``radiation limit, suggesting the failure of the theory. Here, we identify that for high-transmission interfaces, the commonly assumed phonon local thermal equilibrium adjacent to the interface fails, and the measurable phonon temperatures are not their emission temperature. We hence develop a ``nonequilibrium Landauer approach and define the unique ``dressed and ``intrinsic TBCs. Combining our approach even with a simple diffuse mismatch model (DMM) nearly doubles the theoretical TBCs across the Al/Si and ZnO/GaN interfaces, and the theoretical results agree with experiments for the first time. The radiation limit is also redefined and found to increase over 100% over the original radiation limit, and it can now well bound all the experimental data.
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Periodically driven systems, which can be described by Floquet theory, have been proposed to show characteristic behavior that is distinct from static Hamiltonians. Floquet theory proposes to describe such periodically driven systems in terms of states that are indexed by a photon number in addition to the usual Hilbert space of the system. We propose a way to measure directly this additional Floquet degree of freedom by the measurement of the DC conductance of a single channel quantum point contact. Specifically, we show that a single channel wire augmented with a grating structure when irradiated with microwave radiation can show a DC conductance above the limit of one conductance quantum set by the Landauer formula. Another interesting feature of the proposed system is that being non-adiabatic in character, it can be used to pump a strong gate-voltage dependent photo-current even with linearly polarized radiation.
We introduce a generalized approach to one-dimensional (1D) conduction based on Haldanes concept of fractional statistics (FES) and the Landauer formulation of transport theory. We show that the 1D ballistic thermal conductance is independent of the statistics obeyed by the carriers and is governed by the universal quantum $ (pi^2 k^2_B T)/(3h) $ in the degenerate regime. By contrast, the electrical conductance of FES systems is statistics-dependent. This work unifies previous theories of electron and phonon systems and explains an interesting commonality in their behavior.
Heat produced during a reset operation is meant to show a fundamental bound known as Landauer limit, while simple switch operations have an expected minimum amount of produced heat equal to zero. However, in both cases, present-day technology realizations dissipate far beyond these theoretical limits. In this paper we present a study based on molecular dynamics simulations, where reset and switch protocols are applied on a graphene buckled ribbon, employed here as a nano electromechanical switch working at the thermodynamic limit.
The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the softer material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.
In the independent electron approximation, the average (energy/charge/entropy) current flowing through a finite sample S connected to two electronic reservoirs can be computed by scattering theoretic arguments which lead to the famous Landauer-Buttiker formula. Another well known formula has been proposed by Thouless on the basis of a scaling argument. The Thouless formula relates the conductance of the sample to the width of the spectral bands of the infinite crystal obtained by periodic juxtaposition of S. In this spirit, we define Landauer-Buttiker crystalline currents by extending the Landauer-Buttiker formula to a setup where the sample S is replaced by a periodic structure whose unit cell is S. We argue that these crystalline currents are closely related to the Thouless currents. For example, the crystalline heat current is bounded above by the Thouless heat current, and this bound saturates iff the coupling between the reservoirs and the sample is reflectionless. Our analysis leads to a rigorous derivation of the Thouless formula from the first principles of quantum statistical mechanics.
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