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Register a new userReset and switch protocols at Landauer limit in a graphene buckled ribbon
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Heat produced during a reset operation is meant to show a fundamental bound known as Landauer limit, while simple switch operations have an expected minimum amount of produced heat equal to zero. However, in both cases, present-day technology realizations dissipate far beyond these theoretical limits. In this paper we present a study based on molecular dynamics simulations, where reset and switch protocols are applied on a graphene buckled ribbon, employed here as a nano electromechanical switch working at the thermodynamic limit.
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Interactions between stacked two-dimensional (2D) atomic crystals can radically change their properties, leading to essentially new materials in terms of the electronic structure. Here we show that monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition, which results in periodically strained superlattices. By using scanning tunneling microscopy and spectroscopy and support from numerical simulations, we show that such lateral superlattices in graphene lead to a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. The described approach of controllable buckling of 2D crystals offers a venue for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat bands.
Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sensitivity to obtain a novel tool for better understanding the role that background impurities play in the electrical properties of high-mobility AlGaAs/GaAs heterostructures and nanoscale devices. In particular, we report the remarkable ability to first alter the disorder potential in an undoped AlGaAs/GaAs heterostructure by optical illumination and then reset it back to its initial configuration by room temperature thermal cycling in the dark. We attribute this behavior to a mixture of C background impurities acting as shallow acceptors and deep trapping by Si impurities. This alter and reset capability, not possible in modulation-doped heterostructures, offers an exciting route to studying how scattering from even small densities of charged impurities influences the properties of nanoscale semiconductor devices.
Periodically driven systems, which can be described by Floquet theory, have been proposed to show characteristic behavior that is distinct from static Hamiltonians. Floquet theory proposes to describe such periodically driven systems in terms of states that are indexed by a photon number in addition to the usual Hilbert space of the system. We propose a way to measure directly this additional Floquet degree of freedom by the measurement of the DC conductance of a single channel quantum point contact. Specifically, we show that a single channel wire augmented with a grating structure when irradiated with microwave radiation can show a DC conductance above the limit of one conductance quantum set by the Landauer formula. Another interesting feature of the proposed system is that being non-adiabatic in character, it can be used to pump a strong gate-voltage dependent photo-current even with linearly polarized radiation.
In this Chapter we provide a review of the main results obtained in the modeling of graphene kinks and antikinks, which are elementary topological excitations of buckled graphene membranes. We introduce the classification of kinks, as well as discuss kink-antikink scattering, and radiation-kink interaction. We also report some new findings including i) the evidence that the kinetic energy of graphene kinks is described by a relativistic expression, and ii) demonstration of damped dynamics of kinks in membranes compressed in the longitudinal direction. Special attention is paid to highlight the similarities and differences between the graphene kinks and kinks in the classical scalar $phi^4$ theory. The unique properties of graphene kinks discussed in this Chapter may find applications in nanoscale motion.
Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed theoretical results or even the absolute upper limit called the ``radiation limit, suggesting the failure of the theory. Here, we identify that for high-transmission interfaces, the commonly assumed phonon local thermal equilibrium adjacent to the interface fails, and the measurable phonon temperatures are not their emission temperature. We hence develop a ``nonequilibrium Landauer approach and define the unique ``dressed and ``intrinsic TBCs. Combining our approach even with a simple diffuse mismatch model (DMM) nearly doubles the theoretical TBCs across the Al/Si and ZnO/GaN interfaces, and the theoretical results agree with experiments for the first time. The radiation limit is also redefined and found to increase over 100% over the original radiation limit, and it can now well bound all the experimental data.
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