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Register a new userCircular photogalvanic effect in Cu/Bi bilayers
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We have studied the circular photogalvanic effect (CPGE) in Cu/Bi bilayers. When a circularly polarized light in the visible range is irradiated to the bilayer from an oblique incidence, we find a photocurrent that depends on the helicity of light. Such photocurrent appears in a direction perpendicular to the light plane of incidence but is absent in the parallel configuration. The helicity dependent photocurrent is significantly reduced for a Bi single layer film and the effect is nearly absent for a Cu single layer film. Conventional interpretation of the CPGE suggests the existence of spin-momentum locked band(s) of a Rashba type in the Cu/Bi bilayer. In contrast to previous reports on the CPGE studied in other systems, however, the light energy used here to excite the carriers is much larger than the band gap of Bi. Moreover, the CPGE of the Cu/Bi bilayer is larger when the energy of the light is larger: the helicity dependent photocurrent excited with a blue light is nearly two times larger than that of a red light. We therefore consider the CPGE of the Cu/Bi bilayer may have a different origin compared to conventional systems.
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We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermis golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport.
We introduce the magnon circular photogalvanic effect enabled by stimulated Raman scattering. This provides an all-optical pathway to the generation of directed magnon currents with circularly polarized light in honeycomb antiferromagnetic insulators. The effect is the leading order contribution to magnon photocurrent generation via optical fields. Control of the magnon current by the polarization and angle of incidence of the laser is demonstrated. Experimental detection by sizeable inverse spin Hall voltages in platinum contacts is proposed.
The resonant circular photogalvanic effect is observed in wurtzite (0001)-oriented GaN low-dimensional structures excited by infrared radiation. The current is induced by angular momentum transfer of photons to the photoexcited electrons at resonant inter-subband optical transitions in a GaN/AlGaN heterojunction. The signal reverses upon the reversal of the radiation helicity or, at fixed helicity, when the propagation direction of the photons is reversed. Making use of the tunability of the free-electron laser FELIX we demonstrate that the current direction changes by sweeping the photon energy through the intersubband resonance condition, in agreement with theoretical considerations.
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.
Thanks to the strong spin-orbit interaction (SOI), HgTe-based quantum wells (QWs) exhibit very rich spin-related properties. But the full descriptions of them are beyond the simple parabolic band models and conventional Rashba and Dresselhaus SOI terms, as a result of the strong interband coupling of the narrow gap band structures. Here, we develop a theoretical method to calculate the circular photogalvanic effect (CPGE) in Hg$_{0.3}$Cd$_{0.7}$Te/HgTe/Hg$_{0.3}$Cd$_{0.7}$Te quantum wells (HgTe QWs) based on the realistic eight-band $mathbf{k}cdotmathbf{p}$ model with density matrix formalism. Our method could take account of the unusual band structures and SOIs of HgTe QWs, therefore can be used to calculate the CPGE currents in HgTe QWs with non-parabolic, Dirac-like and inverted energy dispersions. The microscopic origin of CPGE and the interplay effect of structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) is also investigated. In addition, this method is extended to study the pure spin currents (PSCs) in HgTe QWs injected by linearly polarized light at normal incidence. Our calculation results support the following findings: (i) In the inverted phase regime, the energy dispersion of heavily inverted HgTe QWs could be strongly distorted, lead to a significant enhancement of CPGE at a certain range of energy spectrum. (ii) The interplay of SIA and BIA could lead to the CPGE currents anisotropically dependent on the azimuth angle of oblique incident light. (iii) The PSC $j_{y}^{x}$ ($xparallel[110]$ and $yparallel[bar{1}10]$) produced by [110]-linearly-polarized light could change sign with HgTe QW transformed from normal phase to inverted phase. These findings might be utilized in developing the HgTe-based infrared/terahertz optoelectronic and spintronic devices.
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