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Register a new userObservation of the novel type of ordering: Spontaneous ferriquadrupolar order
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Using Raman and infrared spectroscopies the spontaneous ferriquadrupolar ordering has been observed in the rare-earth-based system KDy(MoO$_4$)$_2$. Ordered quadrupoles in the electron subsystem attend non-equivalent distortions of rare-earth ions in the ordered phase. The mean field theory explaining the onset of such a type of ordering has been constructed.
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Using resonant soft x-ray scattering as a function of both temperature and magnetic field, we reveal a large number of almost degenerate magnetic orders in SrCo6O11. The Ising-like spins in this frustrated material in fact exhibit a so-called magnetic devils staircase. It is demonstrated how a magnetic field induces transitions between different microscopic spin configurations, which is responsible for the magnetoresistance of SrCo6O11. This material therefore constitutes a unique combination of a magnetic devils staircase and spin valve effects, yielding a novel type of magnetoresistance system.
We present resonant soft X-ray scattering (RSXS) results from small band width manganites (Pr,Ca)MnO$_3$, which show that the CE-type spin ordering (SO) at the phase boundary is stabilized only below the canted antiferromagnetic transition temperature and enhanced by ferromagnetism in the macroscopically insulating state (FM-I). Our results reveal the fragility of the CE-type ordering that underpins the colossal magnetoresistance (CMR) effect in this system, as well as an unexpected cooperative interplay between FM-I and CE-type SO which is in contrast to the competitive interplay between the ferromagnetic metallic (FM-M) state and CE-type ordering.
Besides magnetic and charge order, regular arrangements of orbital occupation constitute a fundamental order parameter of condensed matter physics. Even though orbital order is difficult to identify directly in experiments, its presence was firmly established in a number of strongly correlated, three-dimensional Mott insulators. Here, reporting resonant X-ray scattering experiments on the layered Van der Waals compound $1T$-TiSe$_2$, we establish the emergence of orbital order in a weakly correlated, quasi-two-dimensional material. Our experimental scattering results are consistent with first-principles calculations that bring to the fore a generic mechanism of close interplay between charge redistribution, lattice displacements, and orbital order. It demonstrates the essential role that orbital degrees of freedom play in TiSe$_2$, and their importance throughout the family of correlated Van der Waals materials.
The pyrochlore insulator Yb2Ti2O7 has attracted the attention of experimentalists and theoreticians alike for about 15 years. Conflicting neutron diffraction data on the possible existence of magnetic Bragg reflections at low temperature have been published. Here we report the observation of magnetic Bragg reflections by neutron powder diffraction at 60 mK. The magnetic diffraction pattern is analyzed using representation theory. We find Yb2Ti2O7 to be a splayed ferromagnet as reported for Yb2Sn2O7, a sibling compound with also dominating ferromagnetic interactions as inferred from the positive Curie-Weiss temperature. However, the configuration of the magnetic moment components perpendicular to the easy axis is of the all-in--all-out type in Yb2Ti2O7 while it is two-in--two-out in Yb2Sn2O7. An overall experimental picture of the magnetic properties emerges.
Memory or transistor devices based on electrons spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electrons valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to one by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, two-fold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.
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