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Register a new userNarrow linewidth lasing and soliton Kerr-microcombs with ordinary laser diodes
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Narrow linewidth lasers and optical frequency combs generated with mode-locked lasers revolutionized optical frequency metrology. The advent of soliton Kerr frequency combs in compact crystalline or integrated ring optical microresonators opens new horizons for applications. These combs, as was naturally assumed, however, require narrow-linewidth single-frequency pump lasers. We demonstrate that a regular multi-frequency Fabry-Perot laser diode self-injection locked to an optical whispering gallery mode (WGM) microresonator can be first efficiently transformed to a single-frequency ultra-narrow-linewidth source and then to coherent soliton comb oscillator with low power consumption and possibility of further integration.
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Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms.
Dissipative Kerr solitons (DKSs) have been generated via injection locking of chipscale microresonators to continuous-wave (CW) III-V lasers. This advance has enabled fully integrated hybrid microcomb systems that operate in turnkey mode and can access microwave repetition rates. Yet, CW-driven DKS exhibits low energy conversion efficiency and high optical power threshold, especially when the repetition rate is within the microwave range that is convenient for direct detection with off-the-shelf electronics. Efficient DKS can be generated by spatiotemporally structured light (i.e., pulsed pumping), which to date however has required complex cascaded modulators for pulse synthesis. Here we demonstrate a photonic integrated approach to pulsed pumping. By actively switching the bias current of injection-locked III-V semiconductor lasers with switching frequencies in the X-band and K-band microwave ranges, we pump a crystalline and integrated microresonators with coherent picosecond laser pulses, achieving DKS generation with stable repetition rates and lowering the required average pumping power by one order of magnitude to a record-setting level of a few milliwatts. In addition, we unveil the critical role of the phase profile of the pumping pulses, and for the first time implement phase engineering on the pulsed pumping scheme by either accessing a multimode lasing regime in the gain-switching mode or applying external chirping to support robust single-soliton generation. Our work leverages the advantages of gain switching technique and pulse pumping technique, and establishes the merits of combining distinct compact frequency comb platforms that enhance the potential of energy-efficient chipscale microcombs.
Ultralow noise, yet tunable lasers are a revolutionary tool in precision spectroscopy, displacement measurements at the standard quantum limit, and the development of advanced optical atomic clocks. Further applications include LIDAR, coherent communications, frequency synthesis, and precision sensors of strain, motion, and temperature. While all applications benefit from lower frequency noise, many also require a laser that is robust and compact. Here, we introduce a dual-microcavity laser that leverages one chip-integrable silica microresonator to generate tunable 1550 nm laser light via stimulated Brillouin scattering (SBS) and a second microresonator for frequency stabilization of the SBS light. This configuration reduces the fractional frequency noise to $7.8times10^{-14} 1/sqrt{Hz}$ at 10 Hz offset, which is a new regime of noise performance for a microresonator-based laser. Our system also features terahertz tunability and the potential for chip-level integration. We demonstrate the utility of our dual-microcavity laser by performing optical spectroscopy with hertz-level resolution.
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 $mu$m wavelength range with 3 mW output, and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated beyond 3 $mu$m due to the challenge of building tunable, high quality-factor (Q) on-chip cavities. We demonstrate a tunable, single-mode mid-IR laser at 3.4 $mu$m using a high-Q silicon microring cavity with integrated heaters and a multi-mode Interband Cascade Laser (ICL). We show that the multiple longitudinal modes of an ICL collapse into a single frequency via self-injection locking with an output power of 0.4 mW and achieve an oxide-clad high confinement waveguide microresonator with a loaded Q of $2.8times 10^5$. Using integrated microheaters, our laser exhibits a wide tuning range of 54 nm at 3.4 $mu$m with 3 dB output power variation. We further measure an upper-bound effective linewidth of 9.1 MHz from the locked laser using a scanning Fabry-Perot interferometer. Our design of a single-mode laser based on a tunable high-Q microresonator can be expanded to quantum-cascade lasers at higher wavelengths and lead to the development of compact, portable, high-performance mid-IR sensors for spectroscopic and sensing applications.
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