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Register a new userTunable narrow linewidth chip-scale mid-IR laser
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Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated beyond 3 $mu$m due to the challenge of building tunable, high quality-factor (Q) on-chip cavities. We demonstrate a tunable, single-mode mid-IR laser at 3.4 $mu$m using a high-Q silicon microring cavity with integrated heaters and a multi-mode Interband Cascade Laser (ICL). We show that the multiple longitudinal modes of an ICL collapse into a single frequency via self-injection locking with an output power of 0.4 mW and achieve an oxide-clad high confinement waveguide microresonator with a loaded Q of $2.8times 10^5$. Using integrated microheaters, our laser exhibits a wide tuning range of 54 nm at 3.4 $mu$m with 3 dB output power variation. We further measure an upper-bound effective linewidth of 9.1 MHz from the locked laser using a scanning Fabry-Perot interferometer. Our design of a single-mode laser based on a tunable high-Q microresonator can be expanded to quantum-cascade lasers at higher wavelengths and lead to the development of compact, portable, high-performance mid-IR sensors for spectroscopic and sensing applications.
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We present the first demonstration of a narrow linewidth, waveguide-based Brillouin laser which is enabled by large Brillouin gain of a chalcogenide chip. The waveguides are equipped with vertical tapers for low loss coupling. Due to optical feedback for the Stokes wave, the lasing threshold is reduced to 360 mW, which is 5 times lower than the calculated single-pass Brillouin threshold for the same waveguide. The slope efficiency of the laser is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.
A guided-wave chip laser operating in a single longitudinal mode at 2860 nm is presented. The cavity was set in the Littman-Metcalf configuration to achieve single-frequency operation with a side-mode suppression ratio above 33 dB. The chip lasers linewidth was found to be limited by mechanical fluctuations, but its Lorentzian contribution was estimated to be lower than 1 Hz using a heterodyne technique. This demonstration incorporates a high coherence source with the simplicity provided by the compactness of chip lasers.
We have developed and characterised a stable, narrow linewidth external-cavity laser (ECL) tunable over 100 nm around 1080 nm, using a single-angled-facet gain chip. We propose the ECL as a low-cost, high-performance alternative to fibre and diode lasers in this wavelength range and demonstrate its capability through the spectroscopy of metastable helium. Within the coarse tuning range, the wavelength can be continuously tuned over 30 pm (7.8 GHz) without mode-hopping and modulated with bandwidths up to 3 kHz (piezo) and 37(3) kHz (current). The spectral linewidth of the free-running ECL was measured to be 22(2) kHz (Gaussian) and 4.2(3) kHz (Lorentzian) over 22.5 ms, while a long-term frequency stability better than 40(20) kHz over 11 hours was observed when locked to an atomic reference.
Ultralow noise, yet tunable lasers are a revolutionary tool in precision spectroscopy, displacement measurements at the standard quantum limit, and the development of advanced optical atomic clocks. Further applications include LIDAR, coherent communications, frequency synthesis, and precision sensors of strain, motion, and temperature. While all applications benefit from lower frequency noise, many also require a laser that is robust and compact. Here, we introduce a dual-microcavity laser that leverages one chip-integrable silica microresonator to generate tunable 1550 nm laser light via stimulated Brillouin scattering (SBS) and a second microresonator for frequency stabilization of the SBS light. This configuration reduces the fractional frequency noise to $7.8times10^{-14} 1/sqrt{Hz}$ at 10 Hz offset, which is a new regime of noise performance for a microresonator-based laser. Our system also features terahertz tunability and the potential for chip-level integration. We demonstrate the utility of our dual-microcavity laser by performing optical spectroscopy with hertz-level resolution.
More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission ($K$-factor) and the effective $alpha$-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.
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