Do you want to publish a course? Click here

Entangling Distant Spin qubits via a Magnetic Domain Wall

104   0   0.0 ( 0 )
 Added by Benedetta Flebus
 Publication date 2018
  fields Physics
and research's language is English




Ask ChatGPT about the research

The scalability of quantum networks based on solid-state spin qubits is hampered by the short range of natural spin-spin interactions. Here, we propose a scheme to entangle distant spin qubits via the soft modes of an antiferromagnetic domain wall (DW). As spin qubits, we focus on quantum impurities (QIs) placed in the vicinity of an insulating antiferromagnetic thin film. The low-energy modes harbored by the DW are embedded in the antiferromagnetic bulk, whose intrinsic spin-wave dynamics have a gap that can exceed the THz range. By setting the QI frequency and the temperature well within the bulk gap, we focus on the dipolar interaction between the QI and two soft modes localized at the DW. One is a string-like mode associated with transverse displacements of the DW position, while the dynamics of the other, corresponding to planar rotations of the Neel order parameter, constitute a spin superfluid. By choosing the geometry in which the QI does not couple to the string mode, we use an external magnetic field to control the gap of the spin superfluid and the qubit-qubit coupling it engenders. We suggest that a tunable micron-range coherent coupling between qubits can be established using common antiferromagnetic materials.

rate research

Read More

We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well-suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.
It is well established that the spin-orbit interaction in heavy metal/ferromagnet heterostructures leads to a significant interfacial Dzyaloshinskii-Moriya Interaction (DMI) that modifies the internal structure of magnetic domain walls (DWs) to favor N{e}el over Bloch type configurations. However, the impact of such a transition on the structure and stability of internal DW defects (e.g., vertical Bloch lines) has not yet been explored. We present a combination of analytical and micromagnetic calculations to describe a new type of topological excitation called a DW Skyrmion characterized by a $360^circ$ rotation of the internal magnetization in a Dzyaloshinskii DW. We further propose a method to identify DW Skyrmions experimentally using Fresnel mode Lorentz TEM; simulated images of DW Skyrmions using this technique are presented based on the micromagnetic results.
We propose a time-delay oscillator with Mackey-Glass nonlinearity based on a pinned magnetic domain wall in a thin film nanostrip. Through spin transfer torques, electric currents applied along the strip cause the domain wall to deform and displace away from a geometrical pinning site, which can be converted into a nonlinear transfer function through a suitable choice of a readout. This readout serves as a delay signal, which is subsequently fed back into the applied current with amplification. With micromagnetics simulations, we study the role of the readout position, time delay, and feedback gain on the dynamics of this domain wall. In particular, we highlight regimes in which self-sustained oscillations and complex transients are possible.
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.
156 - G. Vignale , M. E. Flatte 2002
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا