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Register a new userPhoto-induced semimetallic states realised in electron-hole coupled insulators
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Using light to manipulate materials into desired states is one of the goals in condensed matter physics, since light control can provide ultrafast and environmentally-friendly photonics devices. However, it is generally difficult to realise a photo-induced phase which is not merely a higher entropy phase corresponding to a high-temperature phase at equilibrium. Here, we report realization of photo-induced insulator-to-metal transitions in Ta2Ni(Se1-xSx)5 including the excitonic insulator phase using time- and angle-resolved photoemission spectroscopy. From the dynamic properties of the system, we determine that screening of excitonic correlations plays a key role in the timescale of the transition to the metallic phase, which supports the existence of an excitonic-insulator phase at equilibrium. The non-equilibrium metallic state observed unexpectedly in the direct-gap excitonic insulator opens up a new avenue to optical band engineering in electron-hole coupled systems.
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We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.
Topological band theory has achieved great success in the high-throughput search for topological band structures both in paramagnetic and magnetic crystal materials. However, a significant proportion of materials are topologically trivial insulators at the Fermi level. In this paper, we show that, remarkably, for a subset of the topologically trivial insulators, knowing only their electron number and the Wyckoff positions of the atoms we can separate them into two groups: the obstructed atomic insulator (OAI) and the atomic insulator (AI). The interesting group, the OAI, have a center of charge not localized on the atoms. Using the theory of topological quantum chemistry, in this work we first derive the necessary and sufficient conditions for a topologically trivial insulator to be a filling enforced obstructed atomic insulator (feOAI) in the 1651 Shubnikov space groups. Remarkably, the filling enforced criteria enable the identification of obstructed atomic bands without knowing the representations of the band structures. Hence, no ab-initio calculations are needed for the filling enforced criteria, although they are needed to obtain the band gaps. With the help of the Topological Quantum Chemistry website, we have performed a high-throughput search for feOAIs and have found that 957 ICSD entries (638 unique materials) are paramagnetic feOAIs, among which 738 (475) materials have an indirect gap. The metallic obstructed surface states of feOAIs are also showcased by several material examples.
We consider a three-dimensional topological insulator (TI) wire with a non-uniform chemical potential induced by gating across the cross-section. This inhomogeneity in chemical potential lifts the degeneracy between two one-dimensional surface state subbands. A magnetic field applied along the wire, due to orbital effects, breaks time-reversal symmetry and lifts the Kramers degeneracy at zero-momentum. If placed in proximity to an $s$-wave superconductor, the system can be brought into a topological phase at relatively weak magnetic fields. Majorana bound states (MBSs), localized at the ends of the TI wire, emerge and are present for an exceptionally large region of parameter space in realistic systems. Unlike in previous proposals, these MBSs occur without the requirement of a vortex in the superconducting pairing potential, which represents a significant simplification for experiments. Our results open a pathway to the realisation of MBSs in present day TI wire devices.
The unique surface edge states make topological insulators a primary focus among different applications. In this article, we synthesized a large single crystal of Niobium(Nb)-doped Bi2Se3 topological insulator (TI) with a formula Nb0.25Bi2Se3. The single crystal has characterized by using various techniques such as Powder X-ray Diffractometer (PXRD), DC magnetization measurements, Raman, and Ultrafast transient absorption spectroscopy (TRUS). There are (00l) reflections in the PXRD, and Superconductivity ingrown crystal is evident from clearly visible diamagnetic transition at 2.5K in both FC and ZFC measurements. The Raman spectroscopy is used to find the different vibrational modes in the sample. Further, the sample is excited by a pump of 1.90 eV, and a kinetic decay profile at 1.38 eV is considered for terahertz analysis. The differential decay profile has different vibrations, and these oscillations have analyzed in terms of terahertz. This article not only provides evidence of terahertz generation in Nb-doped sample along with undoped sample but also show that the dopant atom changes the dynamics of charge carriers and thereby the shift in the Terahertz frequency response. In conclusion, a suitable dopant can be used as a processor for the tunability of terahertz frequency in TI.
The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices.
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