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Register a new userAnisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design
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Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics.
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A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-damping torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-damping like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices.
We report the generation and detection of spin-orbit torque ferromagnetic resonance (STFMR) in micropatterned epitaxial Fe/Pt bilayers grown by molecular beam epitaxy. The magnetic field dependent measurements at an in-plane magnetic field angle of 45 degrees with respect to the microwave-current direction reveal the presence of two distinct voltage peaks indicative of a strong magnetic anisotropy. We show that STFMR can be employed to probe the underlying magnetic properties including the anisotropies in the Fe layer. We compare our STFMR results with broadband ferromagnetic resonance spectroscopy of the unpatterned bilayer thin films. The experimental STFMR measurements are interpreted using an analytical formalism and further confirmed using micromagnetic modeling, which shed light on the field-dependent magnetization alignment in the microstructures responsible for the STFMR rectification. Our results demonstrate a simple and efficient method for determining magnetic anisotropies in microstructures by means of rf spectroscopy.
Spin-orbit effects [1-4] have the potential of radically changing the field of spintronics by allowing transfer of spin angular momentum to a whole new class of materials. In a seminal letter to Nature [5], Kajiwara et al. showed that by depositing Platinum (Pt, a normal metal) on top of a 1.3 $mu$m thick Yttrium Iron Garnet (YIG, a magnetic insulator), one could effectively transfer spin angular momentum through the interface between these two different materials. The outstanding feature was the detection of auto-oscillation of the YIG when enough dc current was passed in the Pt. This finding has created a great excitement in the community for two reasons: first, one could control electronically the damping of insulators, which can offer improved properties compared to metals, and here YIG has the lowest damping known in nature; second, the damping compensation could be achieved on very large objects, a particularly relevant point for the field of magnonics [6,7] whose aim is to use spin-waves as carriers of information. However, the degree of coherence of the observed auto-oscillations has not been addressed in ref. [5]. In this work, we emphasize the key role of quasi-degenerate spin-wave modes, which increase the threshold current. This requires to reduce both the thickness and lateral size in order to reach full damping compensation [8] , and we show clear evidence of coherent spin-orbit torque induced auto-oscillation in micron-sized YIG discs of thickness 20 nm.
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.
We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru layers. The magnitudes of the SOT effective fields were found to significantly depend on the underlayer material (Cr or Ru) as well as their thicknesses. The damping-like longitudinal effective field ({Delta}H_L) increases with increasing underlayer thickness for all heterostructures. In contrast, the field-like transverse effective field ({Delta}H_T) increases with increasing Ru thickness while it is almost constant or slightly decreases with increasing Cr thickness. The sign of {Delta}H_L observed in the Cr-underlayer devices is opposite from that in the Ru-underlayer devices while {Delta}H_T shows the same sign with a small magnitude. The opposite directions of {Delta}HL indicate that the signs of spin Hall angle in Cr and Ru are opposite, which are in good agreement with theoretical predictions. These results show sizable contribution from SOT even for elements with small spin orbit coupling such as 3d Cr and 4d Ru.
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