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Wide band gap phase change material tuned visible photonics

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 Added by Weiling Dong
 Publication date 2018
  fields Physics
and research's language is English




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Light strongly interacts with structures that are of a similar scale to its wavelength; typically nanoscale features for light in the visible spectrum. However, the optical response of these nanostructures is usually fixed during the fabrication. Phase change materials offer a way to tune the properties of these structures in nanoseconds. Until now, phase change active photonics use materials that strongly absorb visible light, which limits their application in the visible spectrum. In contrast, Stibnite (Sb2S3) is an under-explored phase change material with a band gap that can be tuned in the visible spectrum from 2.0 to 1.7 eV. We deliberately couple this tuneable band gap to an optical resonator such that it responds dramatically in the visible spectrum to Sb2S3 reversible structural phase transitions. We show that this optical response can be triggered both optically and electrically. High speed reprogrammable Sb2S3 based photonic devices, such as those reported here, are likely to have wide applications in future intelligent photonic systems, holographic displays, and micro-spectrometers.



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Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, the integration of PCMs with nanophotonic structures has introduced a new paradigm for non-volatile reconfigurable optics. However, the high loss of the archetypal PCM Ge2Sb2Te5 in both visible and telecommunication wavelengths has fundamentally limited its applications. Sb2S3 has recently emerged as a wide-bandgap PCM with transparency windows ranging from 610nm to near-IR. In this paper, the strong optical phase modulation and low optical loss of Sb2S3 are experimentally demonstrated for the first time in integrated photonic platforms at both 750nm and 1550nm. As opposed to silicon, the thermo-optic coefficient of Sb2S3 is shown to be negative, making the Sb2S3-Si hybrid platform less sensitive to thermal fluctuation. Finally, a Sb2S3 integrated non-volatile microring switch is demonstrated which can be tuned electrically between a high and low transmission state with a contrast over 30dB. Our work experimentally verified the prominent phase modification and low loss of Sb2S3 in wavelength ranges relevant for both solid-state quantum emitter and telecommunication, enabling potential applications such as optical field programmable gate array, post-fabrication trimming, and large-scale integrated quantum photonic network.
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