Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTwo-dimensional flexible high diffusive spin circuits
212
0
0.0
(
0
)
Added by
Venkata Kamalakar Dr.
Publication date
2018
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-based spin sensors, a unique platform to explore pure spin current based operations and low power flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. These circuits, realized using chemical vapour deposited (CVD) graphene, exhibit large spin diffusion coefficients ~0.19-0.24 m2s-1 at room temperature. Compared to conventional devices of graphene on Si/SiO2 substrates, such values are 10-20 times larger and result in a maximum spin diffusion length ~10 um in graphene achieved on such industry standard substrates, showing one order enhanced room temperature non-local spin signals. These devices exhibit state of the art spin diffusion, arising out of a distinct substrate topography that facilitates efficient spin transport, leading to a scalable, high-performance platform towards flexible 2D spintronics. Our innovation unlocks a new domain for the exploration of strain-dependent spin phenomena and paves the way for flexible graphene spin memory-logic units and surface mountable sensors.
rate research
Read More
Similarly to their purely electric counterparts, spintronic circuits may be presented as networks of lumped elements. Due to interplay between spin and charge currents, each element is described by a matrix conductance. We establish reciprocity relations between the entries of the conductance matrix of a multi-terminal linear device, comprising normal metallic and strong ferromagnetic elements with spin-inactive interfaces between them. In particular, reciprocity equates the spin transmissions through a two-terminal element in the opposite directions. When applied to geometric spin ratchets, reciprocity shows that certain effects, announced for such devices, are, in fact, impossible. Finally, we discuss the relation between our work and the spintronic circuit theory formalism.
We develop the theory of anomalous elasticity in two-dimensional flexible materials with orthorhombic crystal symmetry. Remarkably, in the universal region, where characteristic length scales are larger than the rather small Ginzburg scale ${sim} 10, {rm nm}$, these materials possess an infinite set of flat phases which are connected by emergent continuous symmetry. This hidden symmetry leads to the formation of a stable line of fixed points corresponding to different phases. The same symmetry also enforces power law scaling with momentum of the anisotropic bending rigidity and Youngs modulus, controlled by a single universal exponent -- the very same along the whole line of fixed points. These anisotropic flat phases are uniquely labeled by the ratio of absolute Poissons ratios. We apply our theory to monolayer black phosphorus (phosphorene).
In this work, the heat vortexes in two-dimensional porous or ribbon structures are investigated based on the phonon Boltzmann transport equation (BTE) under the Callaway model. First, the separate thermal effects of normal (N) scattering and resistive (R) scattering are investigated with frequency-independent assumptions. And then the heat vortexes in graphene are studied as a specific example. It is found that the heat vortexes can appear in both ballistic (rare R/N scattering) and hydrodynamic (N scattering dominates) regimes but disappear in the diffusive (R scattering dominates) regime. As long as there is not sufficient R scattering, the heat vortexes can appear in present simulations.
By using the momentum-space Lanczos recursive method which considers rigorously all multiple-scattering events, we unveil that the non-perturbative disorder effect has dramatic impact on the charge transport of a two-dimensional electron system with Rashba spin-orbit coupling in the low-density region. Our simulations find a power-law dependence of the dc longitudinal conductivity on the carrier density, with the exponent linearly dependent on the Rashba spin-orbit strength but independent of the disorder strength. Therefore, the classical charge transport influenced by complicated multiple-scattering processes also shows the characteristic feature of the spin-orbit coupling. This highly unconventional behavior is argued to be observable in systems with tunable carrier density and Rashba splitting, such as the LaAlO$_{3}$/SrTiO$_{3}$ interface, the heterostructure of Rashba semiconductors bismuth tellurohalides and the surface alloy Bi$_x$Pb$_y$Sb$_{1-x-y}$/Ag(111).
A bar-joint framework $(G,p)$ in $mathbb{R}^d$ is rigid if the only edge-length preserving continuous motions of the vertices arise from isometries of $mathbb{R}^d$. It is known that, when $(G,p)$ is generic, its rigidity depends only on the underlying graph $G$, and is determined by the rank of the edge set of $G$ in the generic $d$-dimensional rigidity matroid $mathcal{R}_d$. Complete combinatorial descriptions of the rank function of this matroid are known when $d=1,2$, and imply that all circuits in $mathcal{R}_d$ are generically rigid in $mathbb{R}^d$ when $d=1,2$. Determining the rank function of $mathcal{R}_d$ is a long standing open problem when $dgeq 3$, and the existence of non-rigid circuits in $mathcal{R}_d$ for $dgeq 3$ is a major contributing factor to why this problem is so difficult. We begin a study of non-rigid circuits by characterising the non-rigid circuits in $mathcal{R}_d$ which have at most $d+6$ vertices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
