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Register a new userLaser-beam patterned topological insulating states on thin semiconducting MoS2
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Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D transition metal dichalcogenides (TMDCs) have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T-phase embedded into the 2H-phase of thin semiconducting molybdenum-disulfide (MoS2) by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T phases.
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We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {it tunable} topological states in the presence of quantum confinement and superimposed potentials with hexagonal symmetry. We show that the electronic gaps which support chiral spin edge states can be as large as the electronic bandwidth in the heterostructure miniband. The existing lithographic technology can produce a topological insulator (TI) operating at temperature $10- 100K$. Improvement of lithographic techniques will open way to tunable room temperature TI.
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.
In semiconducting armchair graphene ribbons a chiral lattice deformation can induce pairs of topological gap states with opposite energies. Near the critical value of the deformation potential these kink and antikink states become almost degenerate with zero energy and have a fractional charge one-half. Such a semiconducting armchair ribbon represents a one-dimensional topological insulator with nearly zero energy end states. Using data collapse of numerical results we find that the shape of the kink displays an anomalous power-law dependence on the width of the local lattice deformation. We suggest that these gap states may be probed in optical measurements. However, metallic armchair graphene ribbons with a gap induced by many-electron interactions have no gap states and are not topological insulators.
We study the possibility of transferring fermions from a trivial system as particle source to an empty system but at topological phase as a mold for casting a stable topological insulator dynamically. We show that this can be realized by a non-Hermitian unidirectional hopping, which connects a central system at topological phase and a trivial flat-band system with a periodic driving chemical potential, which scans over the valence band of the central system. The near exceptional-point dynamics allows a unidirectional dynamical process: the time evolution from an initial state with full-filled source system to a stable topological insulating state approximately. The result is demonstrated numerically by a source-assistant QWZ model and SSH chain in the presence of random perturbation. Our finding reveals a classical analogy of quench dynamics in quantum matter and provides a way for topological quantum state engineering.
The magnetic behavior of truncated conical nanoparticles in patterned thin films is investigated as a function of their size and shape. Using a scaling technique, phase diagrams giving the relative stability of characteristic internal magnetic structures of the particles are obtained. The role of the uniaxial anisotropy in determining the magnetic properties of such systems is discussed, and a simple method for stablishing its strength is proposed.
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