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Register a new userOptimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature
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Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD growth temperature is decreased. This effect is then combined with temperature-dependent incorporation of NV defects during the CVD growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that growth temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $mu m^3$ and moderate coherence time ($T_2 = 5 mu s$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to affect the film morphology and structure leading to the low temperature (LT) ``electronic growth of metals on semiconductors. In particular, layer-by-layer growth of Pb(111) films has been reported for deposition on Ge(001) below 130 K. An extremely flat morphology is preserved throughout deposition from four up to a dozen of monolayers. These flat films are shown to be metastable and to reorganize into large clusters uncovering the first Pb layer, pseudomorphic to the substrate, already at room temperature. Indications of QSE induced structural variations of the growing films have been reported for Pb growth on Ge(001), where the apparent height of the Pb(111) monatomic step was shown to change in an oscillatory fashion by He atom scattering (HAS) during layer-by-layer growth. The extent of the structural QSE has been obtained by a comparison of the HAS data with X-ray diffraction (XRD) and reflectivity experiments. Whereas step height variations as large as 20 % have been measured by HAS reflectivity, the displacement of the atomic planes from their bulk position, as measured by XRD, has been found to mainly affect the topmost Pb layer, but with a lower extent, i.e. the QSE observed by HAS are mainly due to a perpendicular displacement of the topmost layer charge density. The effect of the variable surface relaxation on the surface vibration has been studied by inelastic HAS to measure the acoustic dispersion of the low energy phonons.
Over the past 20 years, bright sources of entangled photons have led to a renaissance in quantum optical interferometry. Optical interferometry has been used to test the foundations of quantum mechanics and implement some of the novel ideas associated with quantum entanglement such as quantum teleportation, quantum cryptography, quantum lithography, quantum computing logic gates, and quantum metrology. In this paper, we focus on the new ways that have been developed to exploit quantum optical entanglement in quantum metrology to beat the shot-noise limit, which can be used, e.g., in fiber optical gyroscopes and in sensors for biological or chemical targets. We also discuss how this entanglement can be used to beat the Rayleigh diffraction limit in imaging systems such as in LIDAR and optical lithography.
To tune the magnetic properties of hexagonal ferrites, a family of magnetoelectric multiferroic materials, by atomic-scale structural engineering, we studied the effect of structural distortion on the magnetic ordering temperature (TN). Using the symmetry analysis, we show that unlike most antiferromagnetic rare-earth transition-metal perovskites, a larger structural distortion leads to a higher TN in hexagonal ferrites and manganites, because the K3 structural distortion induces the three-dimensional magnetic ordering, which is forbidden in the undistorted structure by symmetry. We also revealed a near-linear relation between TN and the tolerance factor and a power-law relation between TN and the K3 distortion amplitude. Following the analysis, a record-high TN (185 K) among hexagonal ferrites was predicted in hexagonal ScFeO3 and experimentally verified in epitaxially stabilized films. These results add to the paradigm of spin-lattice coupling in antiferromagnetic oxides and suggests further tunability of hexagonal ferrites if more lattice distortion can be achieved.
This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapour deposition (CVD) reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterised using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01 to 0.3 um/h and sp3 and sp2 bonded carbon content consistent with that expected for NCD. The C2 Swan band was probed using cavity ring-down spectroscopy (CRDS) to measure the absolute C2 (a) number density in the plasma during diamond film growth. The number density in the Ar/H2/CH4 plasmas was in the range 2 to 4 x 10^12 cm-3, but found to be present in quantities too low to measure in the He/H2/CH4 plasmas. Optical emission spectrometry (OES) was employed to determine the relative densities of the C2 excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C2 does not play a major role in the growth of nanocrystalline diamond.
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