No Arabic abstract
The recent discovery of superconductivity in NaSn$_2$As$_2$ with a van der Waals layered structure raises immediate questions on its pairing mechanism and underlying electronic structure. Here, we present measurements of the temperature-dependent magnetic penetration depth $lambda(T)$ in single crystals of NaSn$_2$As$_2$ down to $sim40$ mK. We find a very long penetration depth $lambda (0) = 960$ nm, which is strongly enhanced from the estimate of first-principles calculations. This enhancement comes from a short mean free path $ell approx 1.7$ nm, indicating atomic scale disorder possibly associated with the valence-skipping states of Sn. The temperature dependence of superfluid density is fully consistent with the conventional fully gapped s-wave state in the dirty limit. These results suggest that NaSn$_2$As$_2$ is an ideal material to study quantum phase fluctuations in strongly disordered superconductors with its controllable dimensionality.
We grew the single crystals of the SnAs-based van der Waals (vdW)-type superconductor NaSn$_2$As$_2$ and systematically measured its resistivity, specific heat, and ultralow-temperature thermal conductivity. The superconducting transition temperature $T_c$ = 1.60 K of our single crystal is 0.3 K higher than that previously reported. A weak but intrinsic anomaly situated at 193 K is observed in both resistivity and specific heat, which likely arises from a charge-density-wave (CDW) instability. Ultralow-temperature thermal conductivity measurements reveal a fully-gapped superconducting state with a negligible residual linear term in zero magnetic field, and the field dependence of $kappa_0 / T$ further suggests NaSn$_2$As$_2$ is an $s$-wave superconductor.
The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 {Omega} m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics.
The individual building blocks of van der Waals (vdW) heterostructures host fascinating physical phenomena, ranging from ballistic electron transport in graphene to striking optical properties of MoSe2 sheets. The presence of bonded and non-bonded cohesive interactions in a vdW heterostructure, promotes diversity in their structural arrangements, which in turn profoundly modulate the properties of their individual constituents. Here, we report on the presence of correlated structural disorder coexisting with the nearly perfect crystallographic order along the growth direction of epitaxial vdW heterostructures of Bi2Se3/graphene/SiC. Using the depth penetration of X-ray diffraction microscopy and scattering, we probed their crystal structure from atomic to mesoscopic length scales, to reveal that their structural diversity is underpinned by spatially correlated disorder states. The presence of the latter induces on a system, widely considered to behave as a collection of nearly independent 2-dimensional units, a pseudo-3-dimensional character, when subjected to epitaxial constraints and ordered substrate interactions. These findings shed new light on the nature of the vast structural landscape of vdW heterostructures and could enable new avenues in modulating their unique properties by correlated disorder.
We report on the magnetic and superconducting properties of LaO0.5F0.5BiS2 by means of zero- (ZF) and transverse-field (TF) muon-spin spectroscopy measurements (uSR). Contrary to previous results on iron-based superconductors, measurements in zero field demonstrate the absence of magnetically ordered phases. TF-uSR data give access to the superfluid density, which shows a marked 2D character with a dominant s-wave temperature behavior. The field dependence of the magnetic penetration depth confirms this finding and further suggests the presence of an anisotropic superconducting gap.
The local density of states power spectrum of optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) has been interpreted in terms of quasiparticle interference peaks corresponding to an octet of scattering wave vectors connecting k-points where the density of states is maximal. Until now, theoretical treatments have not been able to reproduce the experimentally observed weights and widths of these octet peaks; in particular, the predominance of the dispersing q$_1$ peak parallel to the Cu-O bond directions has remained a mystery. In addition, such theories predict background features which are not observed experimentally. Here, we show that most of the discrepancies can be resolved when a realistic model for the out-of-plane disorder in BSCCO is used. Weak extended potential scatterers, which are assumed to represent cation disorder, suppress large-momentum features and broaden the low-energy q$_7$-peaks, whereas scattering at order parameter variations, possibly caused by a dopant-modulated pair interaction around interstitial oxygens, strongly enhances the dispersing q$_1$-peaks.