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Register a new userVisible -Light-Gated Reconfigurable Rotation of Nanomotors in Electric Fields
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Highly efficient and widely applicable working mechanisms that allow nanomaterials and devices to respond to external stimuli with controlled mechanical motions could make far-reaching impact to reconfigurable, adaptive, and robotic nanodevices. Here, we report an innovative mechanism that allows multifold reconfiguration of mechanical rotation of semiconductor nanoentities in electric (E) fields by visible light stimulation. When illuminated by light in the visible to infrared range, the rotation speed of semiconductor Si nanowires in electric fields can instantly increase, decrease, and even reverse the orientation depending on the intensity of the applied light and the AC E-field frequency. This multifold rotation configuration is highly efficient, instant, and facile. Switching between different modes can be simply controlled by the light intensity at an AC frequency. An array of experimentations, theoretical analysis, and simulations are carried out to understand the underlying principle, which can be attributed to the optically tunable polarization of Si nanowires in aqueous suspension and an external electric field. Finally, leveraging this newly discovered effect, we successfully differentiate semiconductor and metallic nanoentities in a non-contact and non-destructive manner. This research could inspire a new class of reconfigurable nanoelectromechanical and nanorobotic devices for optical sensing, communication, molecule release, detection, nanoparticle separation, and microfluidic automation.
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To develop active nanomaterials that can instantly respond to external stimuli with designed mechanical motions is an important step towards the realization of nanomachines and nanorobots. Herein, we present our finding of a versatile working mechanism that allows instantaneous change of alignment direction and speed of semiconductor nanowires in an external electric field with simple visible-light exposure. The light induced alignment switch can be cycled over hundreds of times and programmed to express words in Morse code. With theoretical analysis and numerical simulation, the working principle can be attributed to the optically tuned real-part (in-phase) electrical polarization of a semiconductor nanowire in an aqueous suspension. The manipulation principle is exploited to create a new type of microscale stepper motor that can readily switch between in-phase and out-phase modes, and agilely operate independent of neighboring motors with patterned light. This work could inspire the development of a new type of micro/nanomachines with individual and reconfigurable maneuverability for many applications.
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 ${deg}C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.
We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies.
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications wavelengths. Here, we report the first monolithically integrated avalanche photodetector (APD) for visible light. Our devices are based on a doped silicon rib waveguide with a novel end-fire input coupling to a silicon nitride waveguide. We demonstrate a high gain-bandwidth product of 216 $pm$ 12 GHz at 20 V reverse bias measured for 685 nm input light, with a low dark current of 0.12 $mu$A . This performance is very competitive when benchmarked against other integrated APDs operating in the infrared range. With CMOS-compatible fabrication and integrability with silicon nitride platforms, our devices are attractive for visible-light photonics applications in sensing and communications.
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