No Arabic abstract
The motion of Abrikosov vortices in type-II superconductors results in a finite resistance in the presence of an applied electric current. Elimination or reduction of the resistance via immobilization of vortices is the holy grail of superconductivity research. Common wisdom dictates that an increase in the magnetic field escalates the loss of energy since the number of vortices increases. Here we show that this is no longer true if the magnetic field and the current are applied parallel to each other.Our experimental studies on the resistive behavior of a superconducting Mo$_{0.79}$Ge$_{0.21}$ nanostrip reveal the emergence of a dissipative state with increasing magnetic field, followed by a pronounced resistance drop, signifying a reentrance to the superconducting state. Large-scale simulations of the 3D time-dependent Ginzburg-Landau model indicate that the intermediate resistive state is due to an unwinding of twisted vortices. When the magnetic field increases, this instability is suppressed due to a better accommodation of the vortex lattice to the pinning configuration. Our findings show that magnetic field and geometrical confinement can suppress the dissipation induced by vortex motion and thus radically improve the performance of superconducting materials.
We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from quantum phase slips in the narrower strips. We find that the current-voltage (I-V) characteristics of the narrowest strips are equivalent to those of small Josephson junctions. Applying a transverse magnetic field drives the devices into a reentrant insulating phase, with I-V-characteristics dual to those in the superconducting regime. The results evidence that our critically disordered superconducting nanostrips behave like small self-organized random Josephson networks.
Superconducting fluctuations in long and narrow strips made from ultrathin NbN films, have been investigated. For large bias currents close to the critical current fluctuations led to localized, temporary transitions into the normal conducting state, which were detected as voltage transients developing between the strip ends. We present models based on fluctuations in the Cooper pair density and current-assisted thermal-unbinding of vortex-antivortex pairs, which explain the current and temperature dependence of the experimental fluctuation rates.
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative magnetoresistance $sigma propto B^2$ for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band $(-)$ electrons does not vanish as the minority carrier density ($n_-$) goes to zero. The residual conductivity of $(-)$ electrons at $n_- = 0$ is unique to graphene. We discuss experimental implications of our theory.
Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.
We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coherent modes emerge at high magnetic fields, which we attribute to the interaction of the qubit and low-energy Andreev states.