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Register a new userMagnetic field-tuned superconductor/insulator transition in TiN nanostrips
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We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from quantum phase slips in the narrower strips. We find that the current-voltage (I-V) characteristics of the narrowest strips are equivalent to those of small Josephson junctions. Applying a transverse magnetic field drives the devices into a reentrant insulating phase, with I-V-characteristics dual to those in the superconducting regime. The results evidence that our critically disordered superconducting nanostrips behave like small self-organized random Josephson networks.
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The motion of Abrikosov vortices in type-II superconductors results in a finite resistance in the presence of an applied electric current. Elimination or reduction of the resistance via immobilization of vortices is the holy grail of superconductivity research. Common wisdom dictates that an increase in the magnetic field escalates the loss of energy since the number of vortices increases. Here we show that this is no longer true if the magnetic field and the current are applied parallel to each other.Our experimental studies on the resistive behavior of a superconducting Mo$_{0.79}$Ge$_{0.21}$ nanostrip reveal the emergence of a dissipative state with increasing magnetic field, followed by a pronounced resistance drop, signifying a reentrance to the superconducting state. Large-scale simulations of the 3D time-dependent Ginzburg-Landau model indicate that the intermediate resistive state is due to an unwinding of twisted vortices. When the magnetic field increases, this instability is suppressed due to a better accommodation of the vortex lattice to the pinning configuration. Our findings show that magnetic field and geometrical confinement can suppress the dissipation induced by vortex motion and thus radically improve the performance of superconducting materials.
The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external pressure or chemical pressure. Also, the superconducting state can be directly developed from AFM insulator by application of pressure in Cs3C60. The resemblance of these phase diagrams hints a universal mechanism governing the unconventional superconductivity in close proximity to AFM insulators. However, the superconductivity in iron-based high-Tc superconductors evolves from an AFM bad metal by doping charge carriers, and no superconductor-insulator transition has been observed so far. Here, we report a first-order transition from superconductor to insulator with a strong charge doping induced by ionic gating in the thin flakes of single crystal (Li,Fe)OHFeSe. The Tc is continuously enhanced with electron doping by ionic gating up to a maximum Tc of 43 K, and a striking superconductor-insulator transition occurs just at the verge of optimal doping with highest Tc. A novel phase diagram of temperature-gating voltage with the superconductor-insulator transition is mapped out, indicating that the superconductor -insulator transition is a common feature for unconventional superconductivity. These results help to uncover the underlying physics of iron-based superconductivity as well as the universal mechanism of high-Tc superconductivity. Our finding also suggests that the gate-controlled strong charge doping makes it possible to explore novel states of matter in a way beyond traditional methods.
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the dirty boson model, we have found a critical exponents product of $ u_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurements in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$, providing striking evidence for quantum critical behavior of the resistivity -- the signature of a $H$-driven SIT. The transition is not direct: it is accompanied by the emergence of an intermediate state, which is a superconductor only at $T=0$. Our finding of a two-stage $H$-driven SIT goes beyond the conventional scenario in which a single quantum critical point separates the superconductor and the insulator in the presence of a perpendicular $H$. Similar two-stage $H$-driven SIT, in which both disorder and quantum phase fluctuations play an important role, may also be expected in other copper-oxide high-temperature superconductors.
A magnetic-field-driven transition from metallic- to semiconducting-type behavior in the basal-plane resistance takes place in highly oriented pyrolytic graphite at a field $H_c sim 1~$kOe applied along the hexagonal c-axis. The analysis of the data reveals a striking similarity between this transition and that measured in thin-film superconductors and Si MOSFETs. However, in contrast to those materials, the transition in graphite is observable at almost two orders of magnitude higher temperatures.
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