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Register a new userStatic strain tuning of quantum dots embedded in a photonic wire
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Added by
Jean-Philippe Poizat
Publication date
2018
fields
Physics
and research's language is
English
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We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.
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We demonstrate reversible strain-tuning of a quantum dot strongly coupled to a photonic crystal cavity. We observe an average redshift of 0.45 nm for quantum dots located inside the cavity membrane, achieved with an electric field of 15 kV/cm applied to a piezo-electric actuator. Using this technique, we demonstrate the ability to tune a quantum dot into resonance with a photonic crystal cavity in the strong coupling regime, resulting in a clear anti-crossing. The bare cavity resonance is less sensitive to strain than the quantum dot and shifts by only 0.078 nm at the maximum applied electric field.
Systems of photonic crystal cavities coupled to quantum dots are a promising architecture for quantum networking and quantum simulators. The ability to independently tune the frequencies of laterally separated quantum dots is a crucial component of such a scheme. Here, we demonstrate independent tuning of laterally separated quantum dots in photonic crystal cavities coupled by in-plane waveguides by implanting lines of protons which serve to electrically isolate different sections of a diode structure.
A system of an array of side-coupled quantum-dots attached to a quantum wire is studied theoretically. Transport through the quantum wire is investigated by means of a noninteracting Anderson tunneling Hamiltonian. Analytical expressions of the transmission probability and phase are given. The transmission probability shows an energy spectrum with forbidden and allowed bands that depends on the up-down asymmetry of the system. In up-down symmetry only the gap survives, and in up-down asymmetry an allowed band is formed. We show that the allowed band arises by the indirect coupling between the up and down quantum dots. In addition, the band edges can be controlled by the degree of asymmetry of the quantum dots. We discuss the analogy between this phenomenon with the Dicke effect in optics.
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universal behavior is observed in atomistic strain simulations (in terms of both strain magnitude and profile) of QDs with different shapes and materials. In this paper, this universal behavior is investigated by atomistic as well as analytic continuum models. Atomistic strain simulations are very accurate but computationally expensive. On the other hand, analytic continuum solutions are based on assumptions that significantly reduce the accuracy of the strain calculations, but are very fast. Both techniques indicate that the strain depends on the aspect ratio (AR) of the QDs, and not on the individual dimensions. Thus simple closed form equations are introduced which directly provide the atomistic strain values inside the QD as a function of the AR and the material parameters. Moreover, the conduction and valence band edges $E_{C/V}$ and their effective masses $m^*_{C/V}$ of the QDs are dictated by the strain and AR consequently. The universal dependence of atomistic strain on the AR is useful in many ways; Not only does it reduce the computational cost of atomistic simulations significantly, but it also provides information about the optical transitions of QDs given the knowledge of $E_{C/V}$ and $m^*_{C/V}$ from AR. Finally, these expressions are used to calculate optical transition wavelengths in InAs/GaAs QDs and the results agree well with experimental measurements and atomistic simulations.
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1mu m < lambda < 1.3 mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 mu eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
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