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Register a new userInduced Bremsstrahlung by light in graphene
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We study the generation of an electromagnetic current in monolayer graphene immersed in a weak perpendicular magnetic field and radiated with linearly polarized monochromatic light. Such a current emits Bremsstrahlung radiation with the same amplitude above and below the plane of the sample, in the latter case consistent with the small amount of light absorption in the material. This mechanism could be an important contribution for the reflexion of light phenomenon in graphene.
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Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the materials band-gap, continues to be the foundation of valleytronics. It is often assumed that achieving valley selective excitation in pristine graphene with all-optical means is not possible due to the inversion symmetry of the system. Here we demonstrate that both valley-selective excitation and valley-selective high-harmonic generation can be achieved in pristine graphene by using the combination of two counter-rotating circularly polarized fields, the fundamental and its second harmonic. Controlling the relative phase between the two colours allows us to select the valleys where the electron-hole pairs and higher-order harmonics are generated. We also describe an all-optical method for measuring valley polarization in graphene with a weak probe pulse. This work offers a robust recipe to write and read valley-selective electron excitations in materials with zero bandgap and zero Berry curvature.
Many striking non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids, ranging from light-induced superconductivity to Floquet-engineered topological phases. These effects are expected to lead to dramatic changes in electrical transport, but can only be comprehensively characterized or functionalized with a direct interface to electrical devices that operate at ultrafast speeds. Here, we make use of laser-triggered photoconductive switches to measure the ultrafast transport properties of monolayer graphene, driven by a mid-infrared femtosecond pulse of circularly polarized light. The goal of this experiment is to probe the transport signatures of a predicted light-induced topological band structure in graphene, similar to the one originally proposed by Haldane. We report the observation of an anomalous Hall effect in the absence of an applied magnetic field. We also extract quantitative properties of the non-equilibrium state. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that reflect the effective band structure expected from Floquet theory. This includes a ~60 meV wide conductance plateau centered at the Dirac point, where a gap of approximately equal magnitude is expected to open. We also find that when the Fermi level lies within this plateau, the estimated anomalous Hall conductance saturates around ~1.8$pm$0.4 e$^2$/h.
We show that the electromagnetic forces generated by the excitations of a mode in graphene-based optomechanical systems are highly tunable by varying the graphene chemical potential, and orders of magnitude stronger than usual non-graphene-based devices, in both attractive and repulsive regimes. We analyze coupled waveguides made of two parallel graphene sheets, either suspended or supported by dielectric slabs, and study the interplay between the light-induced force and the Casimir-Lifshitz interaction. These findings pave the way to advanced possibilities of control and fast modulation for optomechanical devices and sensors at the nano- and micro-scales.
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron scattering by impurities owing to the warping of electron energy spectrum. The valley current has strong polarization dependence, its direction is opposite for normally incident beams of orthogonal linear polarizations. In undoped graphene on a substrate with high susceptibility, electron-electron scattering leads to an additional contribution to the valley current that can dominate.
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor { u}=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.
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