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We present a quantitative investigation of magnetic domain wall pinning in thin magnets with perpendicular anisotropy. A self-consistent description exploiting the universal features of the depinning and thermally activated sub-threshold creep regimes observed in the field driven domain wall velocity, is used to determine the effective pinning parameters controlling the domain wall dynamics: the effective height of pinning barriers, the depinning threshold, and the velocity at depinning. Within this framework, the analysis of results published in the literature allows for a quantitative comparison of pinning properties for a set of magnetic materials in a wide temperature range. On the basis of scaling arguments, the microscopic parameters controlling the pinning: the correlation length of pinning, the collectively pinned domain wall length (Larkin length) and the strength of pinning disorder, are estimated from the effective pinning and the micromagnetic parameters. The analysis of thermal effects reveals a crossover between different pinning length scales and strengths at low reduced temperature.
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We report a comparative study of magnetic field driven domain wall motion in thin films made of different magnetic materials for a wide range of field and temperature. The full thermally activated creep motion, observed below the depinning threshold, is shown to be described by a unique universal energy barrier function. Our findings should be relevant for other systems whose dynamics can be modeled by elastic interfaces moving on disordered energy landscapes.
We explore the magnetic-field-driven motion of domain walls with different chiralities in thin ferromagnetic films made of Pt/Co/Pt, Au/Co/Pt, and Pt/Co/Au. From the analysis of domain wall dynamics, we extract parameters characterizing the interaction between domain walls and weak pinning disorder of the films. The variations of domain wall structure, controlled by an in-plane field, are found to modify the characteristic length-scale of pinning in strong correlation with the domain wall width, whatever its chirality and the interaction strength between domain walls and pinning defects. These findings should be also relevant for a wide variety of elastic interfaces moving in weak pinning disordered media.
The one-dimensional problem of a static head-to-head domain wall structure in a thin soft-magnetic nanowire with circular cross-section is treated within the framework of micromagnetic theory. A radius-dependent analytic form of the domain wall profile is derived by decomposing the magnetostatic energy into a monopolar and a dipolar term. We present a model in which the dipolar term of the magnetostatic energy resulting from the transverse magnetization in the center of the domain wall is calculated with Osborns formulas for homogeneously magnetized ellipsoids [Phys. Rev. 67, 351 (1945)]. The analytic results agree almost perfectly with simulation data as long as the wire diameter is sufficiently small to prevent inhomogeneities of the magnetization along the cross-section. Owing to the recently demonstrated negligible Doring mass of these walls, our results should also apply to the dynamic case, where domain walls are driven by spin-transfer toque effects and/or an axial magnetic field.
We present a characterization of the domain wall solutions arising as minimizers of an energy functional obtained in a suitable asymptotic regime of micromagnetics for infinitely long thin film ferromagnetic strips in which the magnetization is forced to lie in the film plane. For the considered energy, we provide existence, uniqueness, monotonicity, and symmetry of the magnetization profiles in the form of 180$^circ$ and 360$^circ$ walls. We also demonstrate how this energy arises as a $Gamma$-limit of the reduced two-dimensional thin film micromagnetic energy that captures the non-local effects associated with the stray field, and characterize its respective energy minimizers.
Quantum tunneling of domain walls out of an impurity potential in a mesoscopic ferromagnetic sample is investigated. Using improved expressions for the domain wall mass and for the pinning potential, we find that the cross-over temperature between thermal activation and quantum tunneling is of a different functional form than found previously. In materials like Ni or YIG, the crossover temperatures are around 5 mK. We also find that the WKB exponent is typically two orders of magnitude larger than current estimates. The sources for these discrepancies are discussed, and precise estimates for the transition from three-dimensional to one-dimensional magnetic behavior of a wire are given. The cross-over temperatures from thermal to quantum transitions and tunneling rates are calculated for various materials and sample sizes.
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