Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userA New Method for Characterizing Bulk and Surface Conductivities of Three-Dimensional Topological Insulators: Inverted Resistance Measurements
164
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configuration consists of one current lead as a closed loop that fully encloses the other current lead on the surface, and two voltage leads that are both placed outside the loop. We show that in the limit where the transport is dominated by the surface conductivity of the material, the four-terminal resistance measured from such a transport geometry is proportional to $sigma_b/sigma_s^2$, where $sigma_b$ and $sigma_s$ are the bulk and surface conductivities of the material, respectively. We call this new type of measurement textit{inverted resistance measurement}, as the resistance scales inversely with the bulk resistivity. We discuss possible implementations of this new method by performing numerical calculations on different geometries and introduce strategies to extract the bulk and surface conductivities. We also demonstrate inverted resistance measurements on SmB$_6$, a topological Kondo insulator, using both single-sided and coaxially-aligned double-sided Corbino disk transport geometries. Using this new method, we are able to measure the bulk conductivity, even at low temperatures, where the bulk conduction is much smaller than the surface conduction in this material.
rate research
Read More
The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and Bi2-xSbxTe2S, however, allow for such characterizations to be made. Here we report the first experimental comparison of the topological surface states and bulk conductances of Bi2Te2Se and Bi1.1Sb0.9Te2S, based on temperature-dependent high-pressure measurements. We find that the surface state conductance at low temperatures remains constant in the face of orders of magnitude increase in the bulk state conductance, revealing in a straightforward way that the topological surface states and bulk states are decoupled at low temperatures, consistent with theoretical models, and confirming topological insulators to be an excellent venue for studying charge transport in 2D Dirac electron systems.
We study the properties of the surface states in three-dimensional topological insulators in the presence of a ferromagnetic exchange field. We demonstrate that for layered materials like Bi$_2$Se$_3$ the surface states on the top surface behave qualitatively different than the surface states at the side surfaces. We show that the group velocity of the surface states can be tuned by the direction and strength of the exchange field. If the exchange field becomes larger than the bulk gap of the material, a phase transition into a topologically nontrivial semimetallic state occurs. In particular, the material becomes a Weyl semimetal, if the exchange field possesses a non-zero component perpendicular to the layers. Associated with the Weyl semimetallic state we show that Fermi arcs appear at the surface. Under certain circumstances either one-dimensional or even two-dimensional surface flat bands can appear. We show that the appearence of these flat bands is related to chiral symmetries of the system and can be understood in terms of topological winding numbers. In contrast to previous systems that have been suggested to possess surface flat bands, the present system has a much larger energy scale, allowing the observation of surface flat bands at room temperature. The flat bands are tunable in the sense that they can be turned on or off by rotation of the ferromagnetic exchange field. Our findings are supported by both numerical results on a finite system as well as approximate analytical results.
Surface states of three-dimensional topological insulators exhibit the phenomenon of spin-momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin texture of these states is of critical importance for the realization of topological insulator devices, however the main technique available so far is the spin- and angle-resolved photoemission spectroscopy. Here we reveal a close link between the spin texture and a new kind of magneto-resistance, which depends on the relative orientation of the current with respect to the magnetic field as well as the crystallographic axes, and scales linearly with both the applied electric and magnetic fields. This bilinear magneto-electric resistance can be used to map the spin texture of topological surface states by simple transport measurements. For a prototypical Bi2Se3 single layer, we can map both the in-plane and the out-of-plane components of the spin texture - the latter arising from hexagonal warping. Theoretical calculations suggest that the bilinear magneto-electric resistance originates from the conversion of a non-equilibrium spin current into a charge current under the application of the external magnetic field.
We numerically investigate the surface states of a strong topological insulator in the presence of strong electron-electron interactions. We choose a spherical topological insulator geometry to make the surface amenable to a finite size analysis. The single-particle problem maps to that of Landau orbitals on the sphere with a magnetic monopole at the center that has unit strength and opposite sign for electrons with opposite spin. Assuming density-density contact interactions, we find superconducting and anomalous (quantum) Hall phases for attractive and repulsive interactions, respectively, as well as chiral fermion and chiral Majorana fermion boundary modes between different phases. Our setup is preeminently adapted to the search for topologically ordered surface terminations that could be microscopically stabilized by tailored surface interaction profiles.
Dislocations are ubiquitous in three-dimensional solid-state materials. The interplay of such real space topology with the emergent band topology defined in reciprocal space gives rise to gapless helical modes bound to the line defects. This is known as bulk-dislocation correspondence, in contrast to the conventional bulk-boundary correspondence featuring topological states at boundaries. However, to date rare compelling experimental evidences are presented for this intriguing topological observable, owing to the presence of various challenges in solid-state systems. Here, using a three-dimensional acoustic topological insulator with precisely controllable dislocations, we report an unambiguous experimental evidence for the long-desired bulk-dislocation correspondence, through directly measuring the gapless dispersion of the one-dimensional topological dislocation modes. Remarkably, as revealed in our further experiments, the pseudospin-locked dislocation modes can be unidirectionally guided in an arbitrarily-shaped dislocation path. The peculiar topological dislocation transport, expected in a variety of classical wave systems, can provide unprecedented controllability over wave propagations.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
