No Arabic abstract
Periodic driving fields can induce topological phase transitions, resulting in Floquet topological phases with intriguing properties such as very large Chern numbers and unusual edge states. Whether such Floquet topological phases could generate robust edge state conductance much larger than their static counterparts is an interesting question. In this paper, working under the Keldysh formalism, we study two-lead transport via the edge states of irradiated quantum Hall insulators using the method of recursive Floquet-Greens functions. Focusing on a harmonically-driven Hofstadter model, we show that quantized Hall conductance as large as $8e^2/h$ can be realized, but only after applying the so-called Floquet sum rule. To assess the robustness of edge state transport, we analyze the DC conductance, time-averaged current profile and local density of states. It is found that co-propagating chiral edge modes are more robust against disorder and defects as compared with the remarkable counter-propagating edge modes, as well as certain symmetry-restricted Floquet edge modes. Furthermore, we go beyond the wide-band limit, which is often assumed for the leads, to study how the conductance quantization (after applying the Floquet sum rule) of Floquet edge states can be affected if the leads have finite bandwidths. These results may be useful for the design of transport devices based on Floquet topological matter.
The anomalous Floquet Anderson insulator (AFAI) is a two dimensional periodically driven system in which static disorder stabilizes two topologically distinct phases in the thermodynamic limit. The presence of a unit-conducting chiral edge mode and the essential role of disorder induced localization are reminiscent of the integer quantum Hall (IQH) effect. At the same time, chirality in the AFAI is introduced via an orchestrated driving protocol, there is no magnetic field, no energy conservation, and no (Landau level) band structure. In this paper we show that in spite of these differences the AFAI topological phase transition is in the IQH universality class. We do so by mapping the system onto an effective theory describing phase coherent transport in the system at large length scales. Unlike with other disordered systems, the form of this theory is almost fully determined by symmetry and topological consistency criteria, and can even be guessed without calculation. (However, we back this expectation by a first principle derivation.) Its equivalence to the Pruisken theory of the IQH demonstrates the above equivalence. At the same time it makes predictions on the emergent quantization of transport coefficients, and the delocalization of bulk states at quantum criticality which we test against numerical simulations.
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.
We propose a versatile framework to dynamically generate Floquet higher-order topological insulators by multi-step driving of topologically trivial Hamiltonians. Two analytically solvable examples are used to illustrate this procedure to yield Floquet quadrupole and octupole insulators with zero- and/or $pi$-corner modes protected by mirror symmetries. Furthermore, we introduce dynamical topological invariants from the full unitary return map and show its phase bands contain Weyl singularities whose topological charges form dynamical multipole moments in the Brillouin zone. Combining them with the topological index of Floquet Hamiltonian gives a pair of $mathbb{Z}_2$ invariant $ u_0$ and $ u_pi$ which fully characterize the higher-order topology and predict the appearance of zero- and $pi$-corner modes. Our work establishes a systematic route to construct and characterize Floquet higher-order topological phases.
We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity.
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.